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Serveur d'exploration sur l'Indium

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Le cluster Gallium Arsenides - Indium Arsenides

Terms

123Gallium Arsenides
100Indium Arsenides
42Gallium Phosphides
145Indium Phosphides
303Binary compounds
330Ternary compounds
100Inorganic compound
470Semiconductor materials

Associations

Freq.WeightAssociation
840.757Gallium Arsenides - Indium Arsenides
540.404Gallium Arsenides - Indium Phosphides
400.513Gallium Phosphides - Indium Phosphides
260.401Gallium Phosphides - Indium Arsenides
280.390Gallium Arsenides - Gallium Phosphides
400.332Indium Arsenides - Indium Phosphides
290.241Indium Phosphides - Inorganic compound
990.313Binary compounds - Ternary compounds
1120.297Binary compounds - Semiconductor materials
650.300Inorganic compound - Semiconductor materials
1060.269Semiconductor materials - Ternary compounds
480.229Binary compounds - Indium Phosphides
370.213Binary compounds - Indium Arsenides
370.192Binary compounds - Gallium Arsenides
340.187Indium Arsenides - Ternary compounds
360.179Gallium Arsenides - Ternary compounds
340.130Indium Phosphides - Semiconductor materials
Documents par ordre de pertinence
000768 (2011) Optical bistability in GaInAsP/InP coupled-circular resonator microlasers
000814 (2011) InGaAsP photonic crystal slot nanobeam waveguides for refractive index sensing
000A50 (2010) Scanning capacitance microscopy characterization on diffused p-n junctions of InGaAs/InP infrared detectors
000A58 (2010) Quantum dot multi-wavelength comb lasers with Si ring resonator
000C32 (2010) An InP based wide gain spectrum asymmetric quantum wells for large scale optoelectronic monolithic integration
000C79 (2009) Theoretical study of InGaAsP-InP active microring
000D22 (2009) Study on Polarization Dependency of InAs Quantum Dot Coupled InGaAsP Quantum Well SOA
000D42 (2009) Simulation of a 1550 nm InGaAsP-InP transistor laser
000D44 (2009) Room temperature continuous-wave electrically-injected InGaAsP triangle and square microlasers
000D88 (2009) Optical bistability in InP/GaInAsP equilateral- triangle-resonator microlasers
000D94 (2009) Nonlinearities of PIN Photodiodes and PSPICE simulation
000F65 (2009) A ridge width varied two-section index-coupled DFB self-pulsation laser with a wide continuously tunable frequency range
001038 (2008) Single Dipole Mode Photonic Crystal Laser on InGaAsP/InP QW Waveguide Slab
001040 (2008) Simulation of multimode interference couplers with deep rib structure and tunable power splitting ratio
001043 (2008) Self-pulsation in a two-section DFB laser with a varied ridge width
001052 (2008) Properties of Au/Pt/Ti contact to p-InP by rapid thermal processing
001093 (2008) Mode behavior in triangle and square microcavities
001133 (2008) High Uniformity InGaAs Linear Mesa-type SWIR Focal Plane Arrays
001191 (2008) Directional emission InP/GaInAsP square-resonator microlasers
001198 (2008) Design and Fabrication of 2×2 InP/InGaAsP Optical Switch
001246 (2008) 256×1 Element Linear InGaAs Short Wavelength near-Infrared Detector Arrays
001395 (2007) Gated-mode integrated Single photon detector for telecom wavelengths
001458 (2007) Design and Fabrication of High-Performance InGaAsP/InP Electroabsorption Modulator
002386 (1998) Linewidth in microdisk laser
002388 (1998) Investigation of 980nm GaInAs/GaAs/GaInP QW high power lasers
002405 (1998) Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
000759 (2011) Optothermal tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities
000C78 (2009) Theoretical study of ultrafast index dynamics in semiconductor optical amplifiers
001022 (2008) Superluminescent Diode Monolithically Integrated with Novel Y-Branch by Bundle Integrated Waveguide for Fiber Optic Gyroscope
001238 (2008) A novel butt-joint scheme for the preparation of electro-absorptive lasers
001456 (2007) Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser
002373 (1998) Optical disk mode pattern of InGaP microdisks emitting at 0.65 μm
002381 (1998) Microcavity effect and InGaAs/InGaAsP MQW microdisk laser
002399 (1998) High power 980 nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion
002421 (1998) Carbon doped 980nm InGaAs strained quantum well lasers grown by metalorganic chemical-vapor deposition
002805 (1994) An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers
002861 (1992) Native defects in a (GaP)1/(InP)1 strained-layer superlattice : local electronic structure and diffusion mechanism
002887 (1992) Calculations of the spin-lattice coupling coefficients for 3d5 ions in III-V compounds
002893 (1991) Valence band studies on Pd/compound semiconductor interfaces
002900 (1991) Structural stability and electronic density of states in (001)- and (111)-oriented (GAP)1/(InP)1 strained-layer superlattices
002905 (1991) Localized states induced by self-interstitial defects in ultra-thin GaP/InP strained-layer superlattices
002910 (1991) Electronic structure in a Si-doped (GAP)1/(INP)1 strained-layer superlattice
002911 (1991) Effect of strain on the electronic structures of ultrathin layer GaP/InP (111) superlattice : bulk and surface
002931 (1990) Electron subbands and wave functions of type-I and type-II quasiperiodic semiconductor superlattices
002973 (1987) Comparative high-resolution electron-energy-loss spectroscopy study of hydrogen adsorption on GaAs and InP (111) and (111) surfaces
000702 (2011) Sub-picosecond pulse generation using hybrid silicon and GaInP waveguides
000720 (2011) Self-assembled InAs/GaAs quantum dot molecules with InxGa1- xAs strain-reducing layer
000812 (2011) InP-based deep-ridge NPN transistor laser
000815 (2011) InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched mode-locking of Tm,Ho:YVO4 laser
000978 (2010) Voltage-controlled negative refractive index in vertically coupled quantum dot systems
000991 (2010) The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy
000A00 (2010) The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots
000A53 (2010) Research on High-speed Single Photon Detector
000A54 (2010) Research of Weapon Equipments Health Monitoring Based on FBG Intelligent Composite Materials
000A69 (2010) Photoluminescence investigation of InAs quantum dots in quantum well with different strain reducing layer
000B06 (2010) Large blue shift of the absorption edge in modified potential InGaAs/InAIAs coupled quantum wells
000B15 (2010) Intracavity Second Harmonic Generation Characteristics of Semiconductor Disk Laser
000B25 (2010) InGaAs detector arrays hermetic encapsulation technology
000B86 (2010) Electro-optical effects in strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential
000C46 (2010) A Novel Gas Sensor Used for C2H2 Trace Detection in Power Transformer
000D39 (2009) Solid source MBE growth of quantum cascade lasers
000D58 (2009) Principle and Application of Portable NIR Tea Drinks Analyzer
000D95 (2009) Noncontact evaluation of nondoped InP wafers by terahertz time-domain spectroscopy : TERAHERTZ WAVE PHOTONICS
000E08 (2009) Metamorphic InGaAs telecom lasers on GaAs
000E40 (2009) Highly efficient four-wave mixing via intersubband transitions in InGaAs/AlAs coupled double quantum well structures
000E41 (2009) High-Power Passively Q-Switched Mode-Locking Nd:GdVO4 Laser with LT-InGaAs Saturable Absorber
000E43 (2009) High efficiency passively Q-switched mode-locking Nd:GdV04 laser with LT-In0.25Ga0.75As saturable absorber
000E65 (2009) Fiber-coupled near-infrared single-photon spectrum analyzer based on a InGaAs/InP avalanche photodiode single-photon detector
000E66 (2009) Fiber Grating Sensors Demodulation Technique using a Linear Array of Photodetectors
000F18 (2009) Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber
000F30 (2009) Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode
000F45 (2009) Calculation of Exciton Energy in InAs/InP Self-assembled Semiconductor Quantum Wires
001034 (2008) Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step
001070 (2008) Performance Analysis of 256 Element Linear 2.4μm InGaAs Photovoltaic Detector Arrays
001078 (2008) Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique
001087 (2008) Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 μm
001098 (2008) Many body interactions and dynamic shift of the absorption resonance wavelength in all-optical polarization switching of InGaAs(P) MQWs
001134 (2008) High Power 1064nm Laser Diode Array and Measuring Chip Temperature Based on Emitting Spectra
001225 (2008) Analysis on the frequency band of ultra-wide-band electromagnetic radiation from photoconductive semiconductor switches
001235 (2008) A strained InGaAs/InAlAs coupled quantum well with polarization-independent large positive electro-refractive index change
001236 (2008) A preliminary study on laser-induced damage in InGaAs material and detectors
001350 (2007) Multiplication Characteristics of InP/InGaAs Avalanche Photodiodes with Thick Multiplication and Charge Layers
001749 (2005) Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
001963 (2004) Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure
001977 (2004) Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers
001A23 (2004) Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas
001A29 (2004) Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure
001B37 (2003) Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
001B51 (2003) Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots
001C20 (2003) Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures
001C26 (2003) Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer
001D13 (2002) Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure
001D19 (2002) The mechanism of blueshift in excitation-intensity-dependent photoluminescence spectrum of nitride multiple quantum wells
001D77 (2002) Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films
001F14 (2001) Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer
001F20 (2001) Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
001F23 (2001) Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0≤x≤0.3) layer
001F50 (2001) Experimental investigation of photoluminescence dynamics of cavity polaritons under nonresonant excitation
002044 (2000) X-ray photoelectron and Raman spectroscopy of nanocrystalline Ga0.62In0.38Sb-SiO2 composite films
002053 (2000) The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate
Wicri

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