Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster Gallium nitrides - Indium nitrides

Terms

91Gallium nitrides
105Indium nitrides
35Aluminium nitrides
102CVD
175MOCVD
211Atomic force microscopy
77Roughness
117Buffer layer

Associations

Freq.WeightAssociation
780.798Gallium nitrides - Indium nitrides
320.567Aluminium nitrides - Gallium nitrides
300.495Aluminium nitrides - Indium nitrides
280.207Indium nitrides - MOCVD
310.232CVD - MOCVD
260.206Gallium nitrides - MOCVD
260.204Atomic force microscopy - Roughness
250.159Atomic force microscopy - Buffer layer
270.141Atomic force microscopy - MOCVD
Documents par ordre de pertinence
001300 (2007) Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition
001951 (2004) Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
001A34 (2004) Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition
001265 (2007) The high mobility InN film grown by MOCVD with GaN buffer layer
001547 (2006) Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD
001571 (2006) Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
001610 (2006) Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer
001782 (2005) Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates
001783 (2005) Low-temperature growth of InN by MOCVD and its characterization
001952 (2004) Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition
001A26 (2004) Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells
001B98 (2003) Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD
001006 (2008) The characterization and properties of InN grown by MOCVD
001410 (2007) Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction
001440 (2007) Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
001513 (2006) Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
001636 (2006) Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition
001709 (2005) The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE
001970 (2004) Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface
001B37 (2003) Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
001B43 (2003) Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
001B46 (2003) Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate
001B99 (2003) Growth of nanoscale InGaN self-assembled quantum dots
001D18 (2002) The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method
001D84 (2002) Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping
001E10 (2002) A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition
002114 (2000) Elastic strain in InGaN and AlGaN layers
000308 (2013) Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
000573 (2012) Effects of AlN interlayer on the transport properties of nearly lattice-matched InAIN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
000805 (2011) Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
000823 (2011) Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
000907 (2011) Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method
000E80 (2009) Enhanced performance in organic light-emitting diodes by sputtering TiO2 ultra-thin film as the hole buffer layer
001034 (2008) Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step
001255 (2007) Two-step growth of ZnO films with high conductivity and high roughness
001262 (2007) The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
001266 (2007) The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE
001267 (2007) The growth and field electron emission of InGaN nanowires
001345 (2007) Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching
001365 (2007) Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes
001370 (2007) Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium
001464 (2007) Controlled growth of nanostructured III-nitride films via a reactive magnetron sputtering method
001476 (2007) Cathodoluminescence study of InGaN/GaN quantum-well LED structures grown on a Si substrate
001501 (2006) Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
001523 (2006) Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation
001537 (2006) Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition
001558 (2006) Refractive indices of textured indium tin oxide and zinc oxide thin films
001568 (2006) Polar oscillation and dispersion properties of quasi-confined optical phonon modes in a wurtzite GaN/AlxGa1-xN nanowire
001595 (2006) Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy
001621 (2006) Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
001635 (2006) Exciton in wurtzite GaN/AlxGa1-xN coupled quantum dots
001674 (2006) Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
001749 (2005) Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
001767 (2005) Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells
001813 (2005) Growth and characterization of InN on sapphire substrate by RF-MBE
001814 (2005) Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD
001831 (2005) Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy
001965 (2004) Propagating optical-phonon modes and their electron-phonon interactions in wurtzite GaN/AlxGa1-xN quantum wells
001992 (2004) Influence of threading dislocations on the properties of InGaN-based multiple quantum wells
001996 (2004) Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers
001A29 (2004) Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure
001B23 (2003) Void formation and failure in InGaN/AlGaN double heterostructures
001B71 (2003) Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures
001B84 (2003) Localized exciton dynamics in AlInGaN alloy
001C17 (2003) Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells
001C18 (2003) Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells
001C20 (2003) Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures
001C22 (2003) Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure
001C26 (2003) Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer
001C50 (2003) A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition
001D42 (2002) Quasi-thermodynamic analysis of MOVPE growth of GaxAlyIn1-x-yN
001D65 (2002) Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells
001D80 (2002) Estimation of InN phase inclusion in InGaN films grown by MOVPE
002332 (1998-03-30) Optical modes within III-nitride multiple quantum well microdisk cavities
002406 (1998) Growth and doping characteristics of InGaN films grown by low pressure MOCVD
000032 (2014) Enhanced efficiency and stability of polymer solar cells with TiO2 nanoparticles buffer layer
000039 (2014) Bias voltage dependence properties of Nb-doped indium tin oxide thin films by RF magnetron sputtering at room temperature
000069 (2013) Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition
000096 (2013) Surface roughness induced electron mobility degradation in InAs nanowires
000099 (2013) Study on the growth mechanism of tin-doped indium oxide films deposited by direct current pulse magnetron sputtering
000169 (2013) Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells
000176 (2013) MoO3-Au composite interfacial layer for high efficiency and air-stable organic solar cells
000489 (2012) Influence of substrates on the structural and optical properties of ammonia-free chemically deposited CdS films
000518 (2012) Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
000576 (2012) Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
000581 (2012) Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
000720 (2011) Self-assembled InAs/GaAs quantum dot molecules with InxGa1- xAs strain-reducing layer
000785 (2011) MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
000808 (2011) Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
000830 (2011) High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
000837 (2011) High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
000843 (2011) Growth mechanism of vertical compositional inhomogeneities in AlInN films
000997 (2010) The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy
000A39 (2010) Strained InGaAs/GaAs Quantum-Well Laser Emitting at 1054 nm
000A74 (2010) Performance study of InAs/GaAs quantum dot covered by graded InxGa1-xAs layer
000C01 (2010) Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method
000C52 (2010) 1.3 μm InAs/GaAs quantum dots with broad emission spectra
000C83 (2009) The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
000E16 (2009) Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
000E32 (2009) InP nanowires with various morphologies formed by Au-assisted metal-organic chemical vapor deposition
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024