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Serveur d'exploration sur l'Indium

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Le cluster Gallium phosphides - Indium phosphides

Terms

75Gallium phosphides
174Indium phosphides
49Laser diodes
122Semiconductor lasers
121Quaternary compounds
37Threshold current
62Quantum well lasers
121Multiple quantum well

Associations

Freq.WeightAssociation
720.630Gallium phosphides - Indium phosphides
390.409Gallium phosphides - Quaternary compounds
380.491Laser diodes - Semiconductor lasers
500.412Quaternary compounds - Semiconductor lasers
240.357Semiconductor lasers - Threshold current
280.322Quantum well lasers - Semiconductor lasers
460.317Indium phosphides - Quaternary compounds
330.273Multiple quantum well - Quaternary compounds
250.206Multiple quantum well - Semiconductor lasers
240.165Indium phosphides - Multiple quantum well
230.158Indium phosphides - Semiconductor lasers
Documents par ordre de pertinence
001F33 (2001) InGaAs/InGaAsP microdisk lasers grown by GSMBE
001F63 (2001) Demonstrations for optical beam qualities of quantum well lasers
001405 (2007) Equilateral-triangle-resonator injection lasers with directional emission
001495 (2007) 1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
001591 (2006) Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission
001D20 (2002) The low-frequency electrical noise as reliability estimation for high power semiconductor lasers
001E82 (2001) The vertical beam quality of GaInP/AlGaInP strained multiple quantum well laser
001E87 (2001) Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers
001F09 (2001) Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers
001F66 (2001) Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE
001F68 (2001) Band-structure and optical gain for InAsp/In(GaAs)P MQW laser structures
001F69 (2001) Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers
002094 (2000) InGaAsP/GaAs SCH SQW laser arrays grown by LPE
002100 (2000) High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers
002271 (1999) High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition
002427 (1998) Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers
000D42 (2009) Simulation of a 1550 nm InGaAsP-InP transistor laser
001238 (2008) A novel butt-joint scheme for the preparation of electro-absorptive lasers
001456 (2007) Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser
001577 (2006) Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes
001693 (2006) A 1.5 μm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD
001871 (2005) 1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors
001974 (2004) Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm
001B92 (2003) Improved performance of 1.3 μm InGaAsP-InP lasers with an AlInAs electron stopper layer
001C48 (2003) A simple model for optimization design of high performance In1-x-yGayAlxAs strained MQW DFB lasers
001F62 (2001) Design of the active structure of high-performance 1.55-μm In1-x-yGayAlxAs strained MQW lasers
001F72 (2001) Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations
002243 (1999) Room temperature continuous wave visible vertical cavity surface emitting laser
002533 (1997) Analysis of coupling effect on valence band structures of strained multiple quantum wells
002837 (1993) Determination of wavelength dependence of the reflectivity at AR coated diode facets
001254 (2007) Ultrafast all-optical polarization switching based on "virtual excitation" of InGaAs(P) MQWs
001358 (2007) Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy
001400 (2007) Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE
001478 (2007) Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser
001614 (2006) High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD
001633 (2006) Experimental study of NRZ format wavelength conversion using electroabsorption modulator
001809 (2005) High power output and temperature characteristics of 1.06μm diode array module
001943 (2004) Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP-InP quantum-well lasers
001A30 (2004) Determination of the effective refractive index spectrum of a quantum-well semiconductor laser diode from the measured modal gain spectrum
002611 (1996) Investigation of strain-compensated InGaAs(P)/InGaAs(P)/InP multiple quantum well structures grown by LP-MOVPE
000073 (2013) Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
000850 (2011) GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy
000A80 (2010) Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers
000B15 (2010) Intracavity Second Harmonic Generation Characteristics of Semiconductor Disk Laser
000D88 (2009) Optical bistability in InP/GaInAsP equilateral- triangle-resonator microlasers
001191 (2008) Directional emission InP/GaInAsP square-resonator microlasers
001365 (2007) Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes
001537 (2006) Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition
001664 (2006) Dipole mode photonic crystal point defect laser on InGaAsP/InP
001770 (2005) Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy
001815 (2005) GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures
001870 (2005) 980 nm QCW high power semiconductor lasers array
001928 (2004) The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells
001979 (2004) Nonlinearity in power-current characteristics of narrow-pulse-driven AlGaInP laser diodes
001B39 (2003) Study on the surface of AlGaInP
001B69 (2003) Optical gain of InGaAsSb/AlGaAsSb type-I long wavelength quantum-well lasers
001C45 (2003) Accurate interband-energy measurements from Ellipsometric spectra
001D99 (2002) Analysis of the Al content in semiconductor materials by null ellipsometric spectrometry
001F64 (2001) Damage profiles and damage annealing behavior in Al0.168Ga0.348In0.484P/GaAs implanted with 200 keV Zn+ ions
002138 (2000) Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks
002381 (1998) Microcavity effect and InGaAs/InGaAsP MQW microdisk laser
002386 (1998) Linewidth in microdisk laser
002435 (1998) 1.3μm InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser
002452 (1997-07-07) Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region
002501 (1997) MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures
002609 (1996) Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas
002720 (1995) Femtosecond modulated reflectance investigation of In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 lattice-matched to GaAs (100) substrate
002724 (1995) Effect of V/III ratio on the electrical and optical properties of Si-doped AlGaInP grown by metalorganic chemical vapor deposition
002791 (1994) Observation of laser oscillation without population inversion in InGaAsP microdisk lasers
002797 (1994) High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy
002813 (1993) Transmission coefficient in symmetrical double-well potential structures
002860 (1992) Oxygen in InxGa1-xAsyP1-y Grown on GaAs
000078 (2013) The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm
000227 (2013) Impact of double-cap procedure on the characteristics of InAs/InGaAsP/ InP quantum dots grown by metal-organic chemical vapor deposition
000320 (2013) Band Edge Modulation and Light Emission in InGaN Nanowires Due to the Surface State and Microscopic Indium Distribution
000378 (2012) Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
000831 (2011) High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure
000A39 (2010) Strained InGaAs/GaAs Quantum-Well Laser Emitting at 1054 nm
000A58 (2010) Quantum dot multi-wavelength comb lasers with Si ring resonator
000C28 (2010) Analysis on the high luminous flux white light from GaN-based laser diode
000C32 (2010) An InP based wide gain spectrum asymmetric quantum wells for large scale optoelectronic monolithic integration
000C46 (2010) A Novel Gas Sensor Used for C2H2 Trace Detection in Power Transformer
000C60 (2009) White Light Emission from Ultraviolet Laser Diode
000C61 (2009) White Light Emission from Fiber Pigtailed Laser Module
000E08 (2009) Metamorphic InGaAs telecom lasers on GaAs
000E77 (2009) Fabrication and Characterization of 1.3-μm InAs Quantum-Dot VCSELs and Monolithic VCSEL Arrays
000F19 (2009) Diffusion interaction between magnesium and zinc in 650 nm laser diodes wafer
000F65 (2009) A ridge width varied two-section index-coupled DFB self-pulsation laser with a wide continuously tunable frequency range
000F77 (2009) 1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes Configuration
001043 (2008) Self-pulsation in a two-section DFB laser with a varied ridge width
001076 (2008) Optimizing the GaAs capping layer growth of 1.3 μm InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures
001093 (2008) Mode behavior in triangle and square microcavities
001128 (2008) Highly stable white light from ultraviolet laser diode
001134 (2008) High Power 1064nm Laser Diode Array and Measuring Chip Temperature Based on Emitting Spectra
001245 (2008) 40 Gb/s InGaAlAs EML Module Based on Identical Epitaxial Layer Integration Scheme
001329 (2007) Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion
001363 (2007) Long-wavelength VCSELs for optical networks and trace-gas monitoring
001368 (2007) Key issues associated with low threshold current density for InP-based quantum cascade lasers
001404 (2007) Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings
001518 (2006) The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content
Wicri

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