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Serveur d'exploration sur l'Indium

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Le cluster Gallium nitride - Indium nitride

Terms

105Gallium nitride
122Indium nitride
34Gallium phosphide
114Indium phosphide
119Binary compound
122Ternary compound

Associations

Freq.WeightAssociation
760.671Gallium nitride - Indium nitride
310.274Gallium nitride - Ternary compound
300.482Gallium phosphide - Indium phosphide
520.432Binary compound - Ternary compound
380.326Binary compound - Indium phosphide
310.254Indium nitride - Ternary compound
270.242Binary compound - Gallium nitride
240.199Binary compound - Indium nitride
Documents par ordre de pertinence
000158 (2013) Performance Enhancement of Blue InGaN Light-Emitting Diodes With InGaN Barriers and Dip-Shaped Last Barrier
000222 (2013) Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers
000225 (2013) Improved Quantum Efficiency in Semipolar (1101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth
000500 (2012) Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays
000740 (2011) Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells
000863 (2011) Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures
000896 (2011) Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress
000905 (2011) Effect of contact spreading layer on photovoltaic response of InGaN-based solar cells
000922 (2011) Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and Temperature
000A68 (2010) Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays
000B02 (2010) Light-splitting photovoltaic system utilizing two dual-junction solar cells
000B38 (2010) High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells for General Lighting Application
000B43 (2010) Free-standing GaN-based LEDs with ALD-Al2O3/Si substrate removed by wet etching
000B55 (2010) Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAIO2(100) substrates
000B66 (2010) Enhancement in light extraction efficiency from GaN based LEDs with nanopores ITO p-contact grown on patterned sapphire substrate
000D55 (2009) Prospective important semiconducting nanotubes: synthesis, properties and applications
000D85 (2009) Optical properties studies in InGaN/GaN multiple-quantum well
000E24 (2009) Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes
001122 (2008) Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching
001216 (2008) Cathodoluminescence study of GaN-based film structures
001409 (2007) Enhanced output of flip-chip light-emitting diodes with a sidewall reflector
001512 (2006) Theoretical study of phase separation in wurtzite InGaN
001553 (2006) Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects
001561 (2006) Quadratic electro-optic effects and electro-absorption process in InGaN/GaN cylinder quantum dots
001B89 (2003) InGaN/GaN MQW high brightness LED grown by MOCVD
001B95 (2003) High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
001D73 (2002) Fabrication of high-brightness blue InGaN/GaN MQW LEDs
000112 (2013) Single intermediate-band solar cells of InGaN/InN quantum dot supracrystals
000123 (2013) Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells
000190 (2013) Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current Method
000195 (2013) Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer
000216 (2013) InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering
000263 (2013) Enhanced output power of (indium) gallium nitride light emitting diodes by a transparent current spreading-film composed of a disordered network of indium tin oxide nanorods
000294 (2013) Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents
000368 (2012) The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors
000809 (2011) Influence of a Barrier Layer on the Formation of AuBe Ohmic Contact With the p-GaAs Bases of Heterojunction Bipolar Transistors
000919 (2011) Development of free-standing InGaN LED devices on Al2O3/Si substrate by wet etching
000C50 (2010) A Composite Transistor to Suppress Kink Phenomenon in HBTs for Broadband Design
000E67 (2009) Favourable photovoltaic effects in InGaN pin homojunction solar cell
001017 (2008) Synthesis and luminescent properties of Sr4Al14O25:Eu2+ blue-green emitting phosphor for white light-emitting diodes (LEDs)
001590 (2006) Multiplication characteristics of InP/InGaAs avalanche photodiodes with a thicker charge layer
001618 (2006) High performance of gated-mode single-photon detector at 1.55 μm
001662 (2006) Direct wafer bonding technology employing vacuum-cavity pre-bonding
001689 (2006) Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator
001704 (2005) Theoretical analysis of the bandgap for the intermixed Gainp/AlgaInP quantum wells
001798 (2005) InGaAs/InGaAsP microavity laser with directional output waveguide
001802 (2005) Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs
001806 (2005) High-volume production of 650nm GaInP/AlGaInP laser diodes
001835 (2005) Dual wavelength 650-780nm laser diodes
001850 (2005) Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation
001852 (2005) Applications of ICP in optoelectronic device fabrication
001997 (2004) InGaN/GaN multi-quantum dot light-emitting diodes
001A14 (2004) Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers
001B97 (2003) High performances of InP/InGaAs heterojunction bipolar transistors with a δ-doped sheet between two spacer layers
001F44 (2001) Gsmbe growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT
000012 (2014) Strain induced composition profile in InGaN/GaN core-shell nanowires
000024 (2014) Improved performance of lateral GaN-based light emitting diodes with novel buried CBL structure in ITO film and reflective electrodes
000069 (2013) Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition
000073 (2013) Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
000075 (2013) The investigation of GaInP solar cell grown by all-solid MBE
000077 (2013) The electronic and optical properties of InGaN-based solar cells alloys: First-principles investigations via mBJLDA approach
000161 (2013) Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition
000165 (2013) Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface
000185 (2013) Low-temperature growth of InxGa1-xN films by radio-frequency magnetron sputtering
000188 (2013) Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing
000228 (2013) Impact Ionization in Absorption, Grading, Charge, and Multiplication Layers of InP/InGaAs SAGCM APDs With a Thick Charge Layer
000257 (2013) Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks
000264 (2013) Enhanced Ce3+ photoluminescence by Li+ co-doping in CaO phosphor and its use in blue-pumped white LEDs
000304 (2013) Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core-Shell LED Structures
000326 (2013) An improved model for InP/InGaAs double heterojunction bipolar transistors
000338 (2013) A new europium(III)-β-diketonate complex based on diphenylethyne as red phosphors applied in LED
000360 (2012) Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials
000371 (2012) The experimental investigation on dark current for InGaAs-InP avalanche photodiodes
000428 (2012) Quasi-Axial GRIN Lens Implemented in Wedge-Shaped Fiber Coupling With InP-Based PLC
000518 (2012) Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
000520 (2012) Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
000560 (2012) Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes
000623 (2012) Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors
000643 (2012) A Combined Model With Electrothermal Coupling and Electromagnetic Simulation for Microwave Multifinger InP-Based DHBTs
000664 (2011) Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN
000718 (2011) Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN
000736 (2011) Preserving the half-metallicity at the surfaces of rocksalt CaN and SrN and the interfaces of CaN/InN and SrN/GaP: a density functional study
000745 (2011) Polarized GaN-based light-emitting diode with an embedded metallic/dielectric subwavelength grating
000785 (2011) MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
000792 (2011) Long Wavelength Multiple Resonant Cavities RCE Photodetectors on GaAs Substrates
000806 (2011) Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD
000813 (2011) InP Lateral Overgrowth Technology for Silicon Photonics
000819 (2011) In situ photoelectrocatalytic generation of bactericide for instant inactivation and rapid decomposition of Gram-negative bacteria
000822 (2011) Improving p-type contact characteristics by Ni-assisted annealing and effects on surface morphologic evolution of InGaN LED films grown on Si ( 1 1 1 )
000823 (2011) Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
000827 (2011) Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers
000838 (2011) High power GaN-based LEDs with nano-structured Ga-doped ZnO (GZO) transparent conductive layer (TCL)
000891 (2011) Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices
000897 (2011) Effects of sodium sulfamate on electrodeposition of Cu(In,Ga)Se2 thin film
000972 (2011) 100 Gb/s RZ-OOK transmission through 212 km deployed SSMF using monolithically integrated ETDM receiver module
000987 (2010) Thermal stable La2Ti2O7:Eu3+ phosphors for blue-chip white LEDs with high color rendering index
000A56 (2010) Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In
000A93 (2010) Magnetoresistance in a nominally undoped InGaN thin film
000B28 (2010) Improved light extraction of GaN-based light-emitting diodes by ITO patterning with optimization design
000B29 (2010) Impedance spectroscopy characterization of proton-irradiated GaInP/GaAs/Ge triple-junction solar cells
Wicri

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