Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster J. M. Zhou - Q. Huang

Terms

23J. M. Zhou
15Q. Huang
14H. Chen
8L. W. Guo
5X. Z. Shang
5L. C. Cai
5C. L. Bao
4W. X. Wang

Associations

Freq.WeightAssociation
1212J. M. Zhou - Q. Huang
1111H. Chen - J. M. Zhou
88J. M. Zhou - L. W. Guo
77H. Chen - Q. Huang
55Q. Huang - X. Z. Shang
55L. W. Guo - X. Z. Shang
55L. W. Guo - Q. Huang
55J. M. Zhou - X. Z. Shang
55J. M. Zhou - L. C. Cai
55H. Chen - L. C. Cai
55C. L. Bao - L. C. Cai
55C. L. Bao - J. M. Zhou
55C. L. Bao - H. Chen
44W. X. Wang - X. Z. Shang
44Q. Huang - W. X. Wang
44L. W. Guo - W. X. Wang
44L. C. Cai - Q. Huang
44J. M. Zhou - W. X. Wang
Documents par ordre de pertinence
001595 (2006) Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy
001609 (2006) InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
001831 (2005) Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy
001922 (2004) Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique
001A23 (2004) Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas
001B47 (2003) Strain relaxation of InAs epilayer on GaAs under In-rich conditions
001B53 (2003) Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates
002047 (2000) Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer
001976 (2004) Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source
002245 (1999) RHEED characterization of InAs/GaAs grown by MBE
001214 (2008) Characterization of a-plane InN film grown on r-plane sapphire by MOCVD
001300 (2007) Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition
001345 (2007) Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching
001992 (2004) Influence of threading dislocations on the properties of InGaN-based multiple quantum wells
001C17 (2003) Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells
001C18 (2003) Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells
000909 (2011) Effect of acetic acid on ZnO:In transparent conductive oxide prepared by ultrasonic spray pyrolysis
001556 (2006) Selective separation of In(III), Ga(III), and Zn(II) from dilute solution using solvent-impregnated resin containing Di(2-ethylhexyl) phosphoric acid
001632 (2006) Extraction and separation of In(III), Ga(III) and Zn(II) from sulfate solution using extraction resin
001997 (2004) InGaN/GaN multi-quantum dot light-emitting diodes
001A99 (2003-05-05) Characteristics of a field-effect transistor with stacked InAs quantum dots
002351 (1998) The self-organized In0-25Ga0-75As quantum dots grown by migration enhanced epitaxy
002380 (1998) Multi-sheets In0.25Ga0.75As quantum dots grown by migration-enhanced epitaxy
002544 (1996-11-15) High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells
002820 (1993) Structure of InxGa1-xAs/GaAs strained-layer superlattices
002852 (1992) Superconductivity related to indium-diffused GaAs
002886 (1992) Characterization of InxGa1-xAs/GaAs strained-layer superlattices by transmission electron microscopy and convergent beam electron diffraction
002902 (1991) Photomodulated transmission spectroscopy of the intersubband transitions in strained In1-xGaxAs/GaAs multiple quantum wells under hydrostatic pressure
002920 (1990) Pressure dependence of photoluminescence in Inx Ga1-xAs/GaAs strained quantum wells
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024