Le cluster XIANGLIN LIU - ZHANGUO WANG
| 001D18 (2002) | The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method | |
| 001952 (2004) | Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition | |
| 001A29 (2004) | Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure | |
| 001B43 (2003) | Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method | |
| 001D19 (2002) | The mechanism of blueshift in excitation-intensity-dependent photoluminescence spectrum of nitride multiple quantum wells | |
| 001E10 (2002) | A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition | |
| 001A34 (2004) | Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition | |
| 001D37 (2002) | Statistical investigation on morphology development of gallium nitride in initial growth stage | |
| 001F32 (2001) | Indium doping effect on GaN in the initial growth stage | |
| 000059 (2013) | Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells | |
| 000518 (2012) | Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth | |
| 000785 (2011) | MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers | |
| 000C62 (2009) | Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution | |
| 001183 (2008) | Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) | |
| 001674 (2006) | Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition | |
| 001B46 (2003) | Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate | |
| 002095 (2000) | In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE | |
| 002215 (1999) | Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces | |
| 002216 (1999) | Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces | |
| 002234 (1999) | Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates | |
| 002268 (1999) | In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates | |
| 002366 (1998) | Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells | |
| 002407 (1998) | Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity | |
| 000703 (2011) | Study of molecular-beam epitaxy growth on patterned GaAs ( 1 0 0) substrates by masked indium ion implantation | |
| 001061 (2008) | Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector | |
| 001603 (2006) | Influence of dislocation stress field on distribution of quantum dots | |
| 002055 (2000) | The effect of substrate orientation on the morphology of InAs nanostructures on (0 0 1) and (1 1 n)A/B (n = 1-5) InP substrates | |
| 002238 (1999) | Size quantization effects in InAs self-assembled islands on InP(0 0 1) at the onset of 2D-to-3D transition | |
| 000576 (2012) | Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition | |
| 000665 (2011) | Theoretical study on InxGa1-xN/GaN quantum dots solar cell | |
| 000713 (2011) | Spin splitting modulated by uniaxial stress in InAs nanowires | |
| 000758 (2011) | Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy | |
| 000767 (2011) | Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer | |
| 000908 (2011) | Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy | |
| 000940 (2011) | Behavioural investigation of InN nanodots by surface topographies and phase images | |
| 000948 (2011) | An investigation on IXxGa1-xN/GaN multiple quantum well solar cells | |
| 000A05 (2010) | Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density | |
| 000B16 (2010) | Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density | |
| 000C92 (2009) | The application of SnS nanoparticles to bulk heterojunction solar cells | |
| 000D39 (2009) | Solid source MBE growth of quantum cascade lasers | |
| 000F68 (2009) | A mini-staged multi-stacked quantum cascade laser for improved optical and thermal performance | |
| 000F96 (2008) | Theoretical design and performance of InxGa1-xN two-junction solar cells | |
| 001014 (2008) | Synthesis of MDMO-PPV capped PbS quantum dots and their application to solar cells | |
| 001440 (2007) | Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD | |
| 001527 (2006) | Synthesis and structures of morphology-controlled ZnO nano- and microcrystals | |
| 001813 (2005) | Growth and characterization of InN on sapphire substrate by RF-MBE | |
| 001853 (2005) | Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition | |
| 001D36 (2002) | Strain relaxation of InP film directly grown on GaAs patterned compliant substrate | |
| 001D87 (2002) | Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry | |
| 002053 (2000) | The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate | |
| 002065 (2000) | Strain-compensated quantum cascade lasers operating at room temperature | |
| 002098 (2000) | High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers | |
| 002121 (2000) | Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes | |
| 002233 (1999) | Structural and optical characterization of InAs nanostructures grown on high-index InP substrates | |
| 002240 (1999) | Self-organization of wire-like InAs nanostructures on InP | |
| 002246 (1999) | Quantum-dot superluminescent diode : A proposal for an ultra-wide output spectrum |
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