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Serveur d'exploration sur l'Indium

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Le cluster J. F. Wang - J. C. Zhang

Terms

6J. F. Wang
6J. C. Zhang
8J. P. Liu
8M. Wu
17J. Chen

Associations

Freq.WeightAssociation
55J. C. Zhang - J. F. Wang
44J. F. Wang - M. Wu
44J. P. Liu - M. Wu
44J. F. Wang - J. P. Liu
44J. Chen - J. F. Wang
44J. C. Zhang - M. Wu
44J. C. Zhang - J. P. Liu
Documents par ordre de pertinence
001951 (2004) Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
001A25 (2004) Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells
001996 (2004) Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers
001A26 (2004) Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells
001636 (2006) Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition
001728 (2005) Study on the thermal stability of InN by in-situ laser reflectance system
000499 (2012) In assisted realization of p-type C-doped ZnO: A first-principles study
000C67 (2009) Two-step growth of a hierarchical ZnO nanostructure by aqueous thermal decomposition in a neutral solution and its photovoltaic property
000E39 (2009) Hybrid inverted organic photovoltaic cells based on nanoporous TiO2 films and organic small molecules
001216 (2008) Cathodoluminescence study of GaN-based film structures
001399 (2007) Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices
001420 (2007) Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy
001451 (2007) Dual-color polymer light-emitting diodes based on hybrid films of soluble poly(P -phenylenevinylene) derivatives
001547 (2006) Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD
001673 (2006) Critical point transitions of wurtzite indium nitride
001684 (2006) Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
001783 (2005) Low-temperature growth of InN by MOCVD and its characterization
001830 (2005) Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowires
001847 (2005) Characterization and ultrafiltration of semiconductor indium phosphide (InP) wastewater for recycling
001872 (2004-06-28) Investigations on V-defects in quaternary AlInGaN epilayers
001984 (2004) Micro-raman study of hexagonal InN thin films grown by reactive sputtering on GaAs
001A28 (2004) Effect of operating variables on rejection of indium using nanofiltration membranes
001B28 (2003) The gas sensing characteristics of ITO thin film prepared by sol-gel method
001B95 (2003) High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
002140 (2000) An improvement on the prediction of optical constants and radiative properties by introducing an expression for the damping frequency in Drude model
002326 (1998-04-27) Formation of PIn defect in annealed liquid-encapsulated Czochralski InP
002421 (1998) Carbon doped 980nm InGaAs strained quantum well lasers grown by metalorganic chemical-vapor deposition
002837 (1993) Determination of wavelength dependence of the reflectivity at AR coated diode facets
Wicri

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