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Serveur d'exploration sur l'Indium

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Le cluster H. Yang - J. J. Zhu

Terms

28H. Yang
18J. J. Zhu
19Y. T. Wang
22H. Wang
13S. M. Zhang
19D. S. Jiang
12D. G. Zhao
11Z. S. Liu

Associations

Freq.WeightAssociation
1515H. Yang - J. J. Zhu
1414H. Yang - Y. T. Wang
1313H. Wang - H. Yang
1212J. J. Zhu - S. M. Zhang
1212H. Yang - S. M. Zhang
1212D. S. Jiang - S. M. Zhang
1212D. S. Jiang - J. J. Zhu
1212D. S. Jiang - H. Yang
1212D. G. Zhao - J. J. Zhu
1111S. M. Zhang - Z. S. Liu
1111J. J. Zhu - Z. S. Liu
1111H. Wang - S. M. Zhang
1111D. S. Jiang - Z. S. Liu
1111D. G. Zhao - Z. S. Liu
1111D. G. Zhao - S. M. Zhang
1111D. G. Zhao - H. Yang
1111D. G. Zhao - D. S. Jiang
1010J. J. Zhu - Y. T. Wang
1010H. Yang - Z. S. Liu
1010H. Wang - Z. S. Liu
1010H. Wang - J. J. Zhu
1010D. S. Jiang - H. Wang
1010D. G. Zhao - H. Wang
99H. Wang - Y. T. Wang
66S. M. Zhang - Y. T. Wang
66D. S. Jiang - Y. T. Wang
66D. G. Zhao - Y. T. Wang
55Y. T. Wang - Z. S. Liu
Documents par ordre de pertinence
000C83 (2009) The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
000D17 (2009) Suppression of indium droplet formation by adding CC14 during metalorganic chemical vapor deposition growth of InN films
000E16 (2009) Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
001065 (2008) Photoelectric characteristics of metal/InGaN/GaN heterojunction structure
001110 (2008) Investigation on the structural origin of n-type conductivity in InN films
000600 (2012) Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
000B11 (2010) Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
000C23 (2010) Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
000C82 (2009) The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
000581 (2012) Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
001216 (2008) Cathodoluminescence study of GaN-based film structures
001547 (2006) Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD
001996 (2004) Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers
001D84 (2002) Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping
001636 (2006) Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition
001728 (2005) Study on the thermal stability of InN by in-situ laser reflectance system
001783 (2005) Low-temperature growth of InN by MOCVD and its characterization
001872 (2004-06-28) Investigations on V-defects in quaternary AlInGaN epilayers
001951 (2004) Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
001A25 (2004) Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells
001A26 (2004) Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells
001030 (2008) Structural characterization of Mn implanted AlInN
000069 (2013) Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition
000075 (2013) The investigation of GaInP solar cell grown by all-solid MBE
000123 (2013) Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells
000308 (2013) Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
000B14 (2010) Inverted small molecule organic solar cells with Ca modified ITO as cathode and MoO3 modified Ag as anode
000B97 (2010) Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process
000E05 (2009) Mn-AlInN: a new diluted magnetic semiconductor
001043 (2008) Self-pulsation in a two-section DFB laser with a varied ridge width
001497 (2006) Electrophoretic ink using urea-formaldehyde microspheres
001588 (2006) Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
001705 (2005) The structural and optical properties of Cu2O films electrodeposited on different substrates
001802 (2005) Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs
001931 (2004) The electrical properties and the interfaces of CU2O/ZnO/ITO p-i-n heterojunction
001B68 (2003) Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells
001D62 (2002) Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots
001E28 (2001-09-17) Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys
001F20 (2001) Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
001F40 (2001) Highly sensitive spectrofluorimetric determination of trace amounts of indium with 5-bromine-salicylaldehyde salicyloylhygrazone
001F85 (2000-12-18) Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells
001F97 (2000-10-02) X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices
002035 (2000-02-15) Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots
002071 (2000) Room temperature (34 °C) operation of strain-compensated quantum cascade lasers
002109 (2000) Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy
002115 (2000) Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
002734 (1994-12-26) Surface scattering of x rays from InP (001) wafers
002741 (1994-10-01) Determination of surface roughness of InP (001) wafers by x-ray scattering
002889 (1992) A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells
Wicri

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