Documents par ordre de pertinence

001111 (2008)		Investigation of vacancy defect in InP crystal by positron lifetime measurement
001991 (2004)		Large diameter Sn-doped indium phosphide single crystal growth by LEC method
001995 (2004)		Indium phosphide crystal growth from phosphorus-rich melt
001F39 (2001)		Hydrogen neutralization effect in bulk N-type LEC InP materials
001942 (2004)		Study on the perfection of in situ P-injection synthesis LEC-InP single crystals
001D97 (2002)		Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
002101 (2000)		H-vacancy complex VInH4 abundance and its influences in n-type LEC InP
000767 (2011)		Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.