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Serveur d'exploration sur l'Indium

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Le cluster R. Zhang - Y. D. Zheng

Terms

17R. Zhang
18Y. D. Zheng
13Y. Shi
11B. Shen
9Z. L. Xie
10B. Liu
8P. Han
7X. Q. Xiu

Associations

Freq.WeightAssociation
1717R. Zhang - Y. D. Zheng
1212Y. D. Zheng - Y. Shi
1111R. Zhang - Y. Shi
1010B. Shen - Y. D. Zheng
99Y. D. Zheng - Z. L. Xie
99R. Zhang - Z. L. Xie
99B. Shen - Y. Shi
99B. Shen - R. Zhang
99B. Liu - Z. L. Xie
99B. Liu - Y. D. Zheng
99B. Liu - R. Zhang
88P. Han - Y. D. Zheng
77X. Q. Xiu - Z. L. Xie
77X. Q. Xiu - Y. D. Zheng
77R. Zhang - X. Q. Xiu
77P. Han - R. Zhang
77B. Liu - X. Q. Xiu
55P. Han - Z. L. Xie
55P. Han - Y. Shi
55B. Liu - P. Han
44Y. Shi - Z. L. Xie
44X. Q. Xiu - Y. Shi
44P. Han - X. Q. Xiu
Documents par ordre de pertinence
000520 (2012) Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
001265 (2007) The high mobility InN film grown by MOCVD with GaN buffer layer
001370 (2007) Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium
001703 (2005) Thermal annealing of InN films grown by metal-organic chemical vapor deposition
000165 (2013) Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface
001211 (2008) Circular photogalvanic effect at inter-band excitation in InN
000864 (2011) Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates
000B75 (2010) Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
001513 (2006) Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
000D91 (2009) Observation of the surface circular photogalvanic effect in InN films
001501 (2006) Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
001749 (2005) Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
001865 (2005) A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
001915 (2004-02-23) Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)]
001B37 (2003) Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
001B71 (2003) Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures
001C20 (2003) Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures
001C26 (2003) Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer
000843 (2011) Growth mechanism of vertical compositional inhomogeneities in AlInN films
000D18 (2009) Superconductivity in the hole-doped oxy-arsenide RE1-xSrxFeAsO (RE = La, Pr)
001112 (2008) Influence of mechanical agitation on ZnSe electrodeposition in H2SeO3-ZnSO4 aqueous solution
Wicri

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