Le cluster Chia-Ming Lee - Jen-Inn Chyi
| 001C57 (2002-10-15) | Localized and quantum-well state excitons in AlInGaN laser-diode structure | |
| 001C85 (2002-05) | Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy | |
| 001D00 (2002-02-18) | Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing | |
| 001E46 (2001-06-01) | Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes | |
| 001E67 (2001-02-15) | Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes | |
| 001E72 (2001-01-15) | Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells | |
| 002040 (2000-01-17) | Stimulated emission study of InGaN/GaN multiple quantum well structures | |
| 002152 (1999-12-01) | Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer | |
| 002153 (1999-12-01) | Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer | |
| 002206 (1999-01) | Room-temperature operation of In0.5Ga0.5As as quantum dot lasers grown on misoriented GaAs substrates by molecular beam epitaxy | |
| 002209 (1999-01) | Photoluminescence characteristics of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates | |
| 002210 (1999-01) | Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots | |
| 002750 (1994-08-08) | Molecular-beam epitaxial growth of InxAl1-xAs on GaAs | |
| 001876 (2004-06-21) | Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes | |
| 001888 (2004-05) | Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy | |
| 001912 (2004-03) | Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers | |
| 001A64 (2003-10-27) | Response to Comment on | |
| 001B00 (2003-05) | Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes | |
| 001B06 (2003-03-24) | In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K | |
| 001C82 (2002-05) | Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs | |
| 001D07 (2002-01-28) | InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy | |
| 001E49 (2001-05-15) | Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures | |
| 001F86 (2000-12-04) | Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures | |
| 001F91 (2000-11-06) | Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells | |
| 002154 (1999-12-01) | Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments | |
| 000023 (2014) | Influence of Pre-trimethylindium flow treatment on blue light emitting diode | |
| 000038 (2014) | Characterizations of chemical bath-deposited zinc oxysulfide films and the effects of their annealing on copper-indium-gallium-selenide solar cell efficiency | |
| 001898 (2004-04-05) | Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions | |
| 001917 (2004-02-15) | Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition | |
| 001A65 (2003-10-27) | Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers | |
| 001C58 (2002-10-15) | Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures | |
| 001C79 (2002-06-10) | Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures | |
| 001F93 (2000-11) | Study of current leakage in InAs p-i-n photodetectors | |
| 002010 (2000-06-19) | Mechanism of luminescence in InGaN/GaN multiple quantum wells | |
| 002324 (1998-04-27) | Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier | |
| 002453 (1997-07-01) | Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates | |
| 002466 (1997-03) | InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy |
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