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Serveur d'exploration sur l'Indium

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Le cluster W. G. Tang - W. Z. Shen

Terms

17W. G. Tang
32W. Z. Shen
29S. C. Shen
42A. Z. Li
17Y. G. Zhang
14J. X. Chen
11M. Qi
11C. Lin

Associations

Freq.WeightAssociation
1717W. G. Tang - W. Z. Shen
1616S. C. Shen - W. Z. Shen
1616S. C. Shen - W. G. Tang
1414A. Z. Li - Y. G. Zhang
1414A. Z. Li - J. X. Chen
1010A. Z. Li - W. Z. Shen
1010A. Z. Li - S. C. Shen
1010A. Z. Li - M. Qi
1010A. Z. Li - C. Lin
88A. Z. Li - W. G. Tang
66J. X. Chen - M. Qi
Documents par ordre de pertinence
001F09 (2001) Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers
002548 (1996-11-01) Photoluminescence studies of InGaAs/InAlAs strained double quantum wells
001B30 (2003) The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors
001F66 (2001) Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE
002378 (1998) Novel In0.49Ga0.51P./(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy
002560 (1996-08-12) Demonstration of light-hole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy
002581 (1996-01-01) Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures
002602 (1996) Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells
002604 (1996) Observation of excitonic polaritons in quaternary GaInAsSb/AlGaAsSb multiple quantum wells
002618 (1996) Exciton line broadening and intersubband absorption in quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
002629 (1995-12-04) Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
002632 (1995-11-01) Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
001368 (2007) Key issues associated with low threshold current density for InP-based quantum cascade lasers
001B95 (2003) High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
001C25 (2003) Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs
001F27 (2001) MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes
002333 (1998-03-23) Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy
002552 (1996-10-15) Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy
002588 (1996) The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE
002597 (1996) Photoluminescence studies of CuInSe2
002599 (1996) Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE
002613 (1996) Improved performance of InAlAs-InGaAs-InP MSM photodetectors with graded superlattice structure grown by gas source MBE
002651 (1995-07-15) Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells
002701 (1995) Room-temperature excitons in strained InGaAs/GaAs quantum wells
002704 (1995) Photoluminescence studies of modulation-doped In0.60Ga0.40As/In0.52Al0.48As strained multiple quantum wells
002721 (1995) Exciton line broadening in strained InGaAs/GaAs single quantum wells
002738 (1994-11-21) Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells
002776 (1994) optical and transport properties of δ-doped pseudomorphic AlGaAs/InGaAs/GaAs structures
002796 (1994) Influence of the cap layer thickness on photoluminescence properties in strained INGaAs/GaAs single quantum wells
000078 (2013) The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm
000274 (2013) Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors
000D67 (2009) Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE
000D81 (2009) Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures
000D84 (2009) Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range
000E48 (2009) Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy
001784 (2005) Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy
001810 (2005) Heat management of MBE-grown antimonide lasers
001842 (2005) Continuous-wave operation quantum cascade lasers at 7.95 μm
001D60 (2002) Interband impact ionization in THz-driven InAs/AlSb heterostructures
001E87 (2001) Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers
001F25 (2001) Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy
001F44 (2001) Gsmbe growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT
002027 (2000-03-15) Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures
002062 (2000) Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100)
002103 (2000) Growth and characterization of high-quality GaInAs/AlInAs triple wells
002221 (1999) The effect of strain on the miscibility gap in Ga-In-Sb ternary alloy
002272 (1999) GSMBE grown infrared quantum cascade laser structures
002501 (1997) MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures
002707 (1995) Molecular beam epitaxial growth, characterization and performance of high-detectivity GaInAsSb/GaSb PIN detectors operating at 2.0 to 2.6 μm
002789 (1994) Optical studies of strained InGaAs/GaAs single quantum wells
000330 (2013) Absorption coefficients of In0.8Ga0.2As at room temperature and 77 K
000619 (2012) Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well
000730 (2011) Quantum dot lasers grown by gas source molecular-beam epitaxy
000C13 (2010) Deposition behavior on the barrier layer of porous anodic alumina
000E02 (2009) Multi-carrier transport properties in p-type ZnO thin films
000F82 (2008) Weak Localization in Indium Nitride Films
001210 (2008) Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz
001277 (2007) Temperature-dependent photoluminescence of undoped, N-doped and N-in codoped ZnO thin films
001351 (2007) Multiple confined-state transitions within surface quantum dots by a piezomodulation reflectance study
001420 (2007) Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy
001524 (2006) Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
001673 (2006) Critical point transitions of wurtzite indium nitride
001933 (2004) Temperature effects on optical properties of InN thin films
001978 (2004) Optical and electrical properties of InN thin films grown by reactive magnetron sputtering
001984 (2004) Micro-raman study of hexagonal InN thin films grown by reactive sputtering on GaAs
001990 (2004) Lattice vibrational properties of InN thin films
001A16 (2004) Experimental studies of lattice dynamical properties in indium nitride
001A58 (2003-11-24) Enhancement of room-temperature photoluminescence in InAs quantum dots
001D68 (2002) Growth-dependent phonon characteristics in InN thin films
001E07 (2002) A novel approach for the evaluation of band gap energy in semiconductors
001E21 (2001-11-15) Phonon-induced photoconductive response in doped semiconductors
001F68 (2001) Band-structure and optical gain for InAsp/In(GaAs)P MQW laser structures
002026 (2000-03-15) Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
002273 (1999) Fatigue-free Pb(Zr0.52Ti0.48)O3 thin films on indium tin oxide coated substrates by a sol-gel process
002671 (1995-04-10) Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells
002703 (1995) Photomodulated transmission spectroscopy of InxGa1-xAs/GaAs MQWs under hydrostatic pressure
002752 (1994-07-18) Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells
002782 (1994) The Fermi-edge singularity in CdTe/Cd1-xMnxTe:In multiple quantum wells
002792 (1994) Modulated cyclotron resonance in multi-quantum well structure of In0.53Ga0.47As/InP induced by interband and exciton excitation
002902 (1991) Photomodulated transmission spectroscopy of the intersubband transitions in strained In1-xGaxAs/GaAs multiple quantum wells under hydrostatic pressure
Wicri

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