Serveur d'exploration sur l'Indium

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Le cluster C. C. Yang - Yung-Chen Cheng

Terms

14C. C. Yang
9Yung-Chen Cheng
9Shih-Wei Feng
6Yen-Sheng Lin
6Kung-Jen Ma
5Yi-Yin Chung
4Kung-Jeng Ma
4En-Chiang Lin

Associations

Freq.WeightAssociation
99C. C. Yang - Yung-Chen Cheng
99C. C. Yang - Shih-Wei Feng
77Shih-Wei Feng - Yung-Chen Cheng
66Shih-Wei Feng - Yen-Sheng Lin
66C. C. Yang - Yen-Sheng Lin
66C. C. Yang - Kung-Jen Ma
55Yi-Yin Chung - Yung-Chen Cheng
55Yen-Sheng Lin - Yung-Chen Cheng
55Shih-Wei Feng - Yi-Yin Chung
55Kung-Jen Ma - Shih-Wei Feng
55C. C. Yang - Yi-Yin Chung
44Yen-Sheng Lin - Yi-Yin Chung
44Kung-Jeng Ma - Yung-Chen Cheng
44Kung-Jeng Ma - Shih-Wei Feng
44Kung-Jen Ma - Yung-Chen Cheng
44En-Chiang Lin - Kung-Jen Ma

Documents par ordre de pertinence
001A92 (2003-06-15) Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells
001C58 (2002-10-15) Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
001C79 (2002-06-10) Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
001C92 (2002-04-08) Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells
001A60 (2003-11-10) Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31
001B08 (2003-03-03) Strong green luminescence in quaternary InAlGaN thin films
001F91 (2000-11-06) Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
001884 (2004-05-15) Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing
001898 (2004-04-05) Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
002040 (2000-01-17) Stimulated emission study of InGaN/GaN multiple quantum well structures
001873 (2004-06-28) Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
001571 (2006) Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
001D55 (2002) Melting enthalpy depression of nanocrystals
002636 (1995-10-09) Nonlinear polarization switching in a semiconductor single quantum well optical amplifier

Wicri

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