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Serveur d'exploration sur l'Indium

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Le cluster H. Q. Ni - Z. C. Niu

Terms

10H. Q. Ni
16Z. C. Niu
7Z. H. Miao
10X. H. Xu
16S. L. Feng
7Z. Gong
5Z. D. Fang
8H. L. Wang

Associations

Freq.WeightAssociation
99H. Q. Ni - Z. C. Niu
77Z. C. Niu - Z. H. Miao
77X. H. Xu - Z. C. Niu
66S. L. Feng - Z. H. Miao
66S. L. Feng - Z. C. Niu
55Z. Gong - Z. H. Miao
55Z. D. Fang - Z. H. Miao
55Z. D. Fang - Z. Gong
55Z. C. Niu - Z. Gong
55Z. C. Niu - Z. D. Fang
55H. Q. Ni - X. H. Xu
55H. L. Wang - S. L. Feng
44X. H. Xu - Z. H. Miao
44X. H. Xu - Z. Gong
44X. H. Xu - Z. D. Fang
44S. L. Feng - Z. Gong
44S. L. Feng - Z. D. Fang
Documents par ordre de pertinence
001930 (2004) The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates
001977 (2004) Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers
001A27 (2004) Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 μm emission self-assembled InAs/GaAs quantum dots
001B51 (2003) Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots
001735 (2005) Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm
001747 (2005) Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy
001776 (2005) Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells
001A55 (2003-12-15) Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices
001F59 (2001) Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands
002146 (2000) 1.35 μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition
000730 (2011) Quantum dot lasers grown by gas source molecular-beam epitaxy
000906 (2011) Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell
000991 (2010) The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy
000A00 (2010) The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots
000A08 (2010) Temperature dependence of hole spin relaxation in ultrathin InAs monolayers
001315 (2007) Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature
002035 (2000-02-15) Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots
002057 (2000) Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution
002081 (2000) Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots
002109 (2000) Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy
000378 (2012) Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
000456 (2012) One-step synthesis of Cu(In,Ga)Se2 absorber layers by magnetron sputtering from a single quaternary target
000463 (2012) Morphology and shape dependent characteristics of InAs/InP(100) quantum dot laser grown by gas source molecular beam epitaxy
000560 (2012) Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes
000962 (2011) A novel one-step electrodeposition to prepare single-phase CuInS2 thin films for solar cells
000B26 (2010) InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy
000E08 (2009) Metamorphic InGaAs telecom lasers on GaAs
001447 (2007) Effect of electron-hole spatial correlation on spin relaxation dynamics in InAs submonolayer
001F19 (2001) Organic negative-resistance devices using PPV containing electron-transporting groups on the main chain
001F97 (2000-10-02) X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices
002410 (1998) Evidence of multimodal patterns of self-organized quantum dots
002414 (1998) Effects of growth interruption on self-assembled InAs/GaAs islands
002424 (1998) Annealing behavior of InAs/GaAs quantum dot structures
002582 (1996) an optosensor based on the fluorescence of metal complexes adsorbed on Chelex 100
Wicri

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