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Serveur d'exploration sur l'Indium

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Le cluster H. Y. Liu - W. H. Jiang

Terms

11H. Y. Liu
9W. H. Jiang
9Y. F. Li
6Z. Z. Sun
8Y. C. Zhang

Associations

Freq.WeightAssociation
66H. Y. Liu - W. H. Jiang
66W. H. Jiang - Y. F. Li
55Y. F. Li - Z. Z. Sun
55Y. C. Zhang - Y. F. Li
55W. H. Jiang - Z. Z. Sun
55W. H. Jiang - Y. C. Zhang
55H. Y. Liu - Z. Z. Sun
55H. Y. Liu - Y. F. Li
Documents par ordre de pertinence
002048 (2000) Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate
002063 (2000) Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates
002070 (2000) Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy
002059 (2000) Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
002274 (1999) Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy
002058 (2000) Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
001E38 (2001-08-15) Thermal redistribution of photocarriers between bimodal quantum dots
001F21 (2001) Optical properties of InGaAs quantum dots formed on InAlAs wetting layer
002125 (2000) Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots
001005 (2008) The defect density of a SiNx /In0.53Ga0.47As interface passivated using (NH4)2Sx
001377 (2007) Improved contrast polymer light-emitting diode with optical interference layers
001B45 (2003) Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer
001D61 (2002) Influence of strain on annealing effects of In(Ga)As quantum dots
001D62 (2002) Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots
001F06 (2001) Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
001F31 (2001) Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy
002064 (2000) Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots
002068 (2000) Self-assembled InAs quantum wires on InP(001)
002116 (2000) Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer
002137 (2000) Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
Wicri

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