Le cluster HONG JIANG - YIXIN JIN
| 000E20 (2009) | Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition | |
| 000F05 (2009) | Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique | |
| 000F62 (2009) | A study of two-step growth and properties of In0.82Ga0.18As on InP | |
| 001186 (2008) | Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD | |
| 001187 (2008) | Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD | |
| 000808 (2011) | Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD | |
| 000C01 (2010) | Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method | |
| 001123 (2008) | Improved field emission characteristic of carbon nanotubes by an Ag micro-particle intermediation layer | |
| 000805 (2011) | Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD | |
| 000907 (2011) | Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method | |
| 002408 (1998) | Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD | |
| 002589 (1996) | Study of GaInAsSb epilayer by scanning electron acoustic microscopy | |
| 001A31 (2004) | Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector | |
| 001C13 (2003) | Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy | |
| 001C29 (2003) | Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots | |
| 002224 (1999) | The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors | |
| 002229 (1999) | Study of overgrowth heterostructure InSb/GaAs by scanning electron acoustic microscopy | |
| 002425 (1998) | Analysis of the R0A product and detectivity in a GaInAsSb infrared photovoltaic detector | |
| 000187 (2013) | Less contribution of nonradiative recombination in ZnO nails compared with rods | |
| 000733 (2011) | Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector | |
| 001952 (2004) | Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition | |
| 001975 (2004) | Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy | |
| 001A29 (2004) | Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure | |
| 001A34 (2004) | Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition | |
| 001A41 (2004) | Calculation of the R0A product in n+-n-p and p+-p-n GaAnAsSb infrared detectors | |
| 001B46 (2003) | Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate | |
| 001C42 (2003) | Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors | |
| 001D36 (2002) | Strain relaxation of InP film directly grown on GaAs patterned compliant substrate |
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