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Serveur d'exploration sur l'Indium

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Le cluster J. H. Chu - S. L. Guo

Terms

15J. H. Chu
11S. L. Guo
5Y. S. Gui
10M. Y. Kong
28Y. P. Zeng
10J. M. Li
7L. J. Cui
6B. Q. Wang

Associations

Freq.WeightAssociation
1111J. H. Chu - S. L. Guo
55S. L. Guo - Y. S. Gui
55S. L. Guo - Y. P. Zeng
1010M. Y. Kong - Y. P. Zeng
88J. M. Li - Y. P. Zeng
77L. J. Cui - Y. P. Zeng
77J. M. Li - M. Y. Kong
66B. Q. Wang - Y. P. Zeng
55L. J. Cui - S. L. Guo
55J. H. Chu - Y. S. Gui
55J. H. Chu - Y. P. Zeng
55J. H. Chu - L. J. Cui
Documents par ordre de pertinence
001250 (2007) Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well
001318 (2007) Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well
001C88 (2002-04-29) Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements
001E29 (2001-09-17) Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
001E37 (2001-08-27) Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates
002115 (2000) Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
001648 (2006) Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
001749 (2005) Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
001B37 (2003) Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
002027 (2000-03-15) Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures
002122 (2000) Effect of rapid thermal annealing on InGaAs/GaAs quantum wells
002232 (1999) Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures
002235 (1999) Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers : Special issue papers on quantum dots
002461 (1997-05-05) Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice
002507 (1997) Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice
002605 (1996) Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice
000A51 (2010) SELF-ASSEMBLING OF INAS QUANTUM DOTS ON GAAS(001) IN MOLECULAR BEAM EPITAXY
000A93 (2010) Magnetoresistance in a nominally undoped InGaN thin film
000B42 (2010) Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure
001709 (2005) The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE
002379 (1998) New method for the growth of highly uniform quantum dots
002469 (1997-02-01) Magneto-transport properties of semiconductors from flatband magnetocapacitance spectroscopy
002500 (1997) Magnetic-field-inducer carrier freeze-out in narrow-gap semiconductors analysed by capacitance spectroscopy
002510 (1997) Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices
002526 (1997) Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE
000500 (2012) Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays
000619 (2012) Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well
000763 (2011) Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots
000E13 (2009) Large reversible magnetocaloric effect in Tb2In
001579 (2006) Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001767 (2005) Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells
001791 (2005) Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001A42 (2004) Annealing ambient controlled deep defect formation in InP
001B13 (2003-02-03) Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity
001B90 (2003) In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate
001B91 (2003) In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate
001C24 (2003) Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate
002068 (2000) Self-assembled InAs quantum wires on InP(001)
002571 (1996-04-01) Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures
002735 (1994-12-15) Hole subband in p-type channel of semiconductor heterostructures
Wicri

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