Serveur d'exploration sur l'Indium

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Le cluster J. Q. Pan - W. Wang

Terms

11J. Q. Pan
22W. Wang
12H. L. Zhu
10L. J. Zhao
7S. Liang
6F. Zhou
26J. Zhang
8W. Feng

Associations

Freq.WeightAssociation
1111J. Q. Pan - W. Wang
1111H. L. Zhu - W. Wang
99L. J. Zhao - W. Wang
99H. L. Zhu - J. Q. Pan
77J. Q. Pan - L. J. Zhao
77H. L. Zhu - S. Liang
66S. Liang - W. Wang
66H. L. Zhu - L. J. Zhao
66F. Zhou - W. Wang
55J. Zhang - W. Wang
44W. Feng - W. Wang
44L. J. Zhao - W. Feng
44J. Q. Pan - W. Feng
44J. Q. Pan - S. Liang
44H. L. Zhu - W. Feng
44F. Zhou - L. J. Zhao
44F. Zhou - J. Q. Pan

Documents par ordre de pertinence
001400 (2007) Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE
001588 (2006) Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
001589 (2006) Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers
000812 (2011) InP-based deep-ridge NPN transistor laser
000F52 (2009) Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates
001495 (2007) 1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
001591 (2006) Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission
001615 (2006) High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD
001621 (2006) Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
001845 (2005) Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD
000F53 (2009) Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition
001614 (2006) High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD
001658 (2006) Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
002403 (1998) Growth of Fe doped semi-insulating InP by LP-MOCVD
002435 (1998) 1.3μm InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser
000E75 (2009) Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers
000F77 (2009) 1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes Configuration
001043 (2008) Self-pulsation in a two-section DFB laser with a varied ridge width
000401 (2012) Structure of AgI-doped Ge-In-S glasses: Experiment, reverse Monte Carlo modelling, and density functional calculations
000815 (2011) InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched mode-locking of Tm,Ho:YVO4 laser
000A67 (2010) Preparation and Characterization of Cu(In,Ga)Se2 Thin Films Derived by Frequency Magnetron Sputtering
000B59 (2010) Experimental and simulation analysis of the dye sensitized solar cell/Cu(In,Ga)Se2 solar cell tandem structure
000B68 (2010) Enhanced electrochromic performance of macroporous WO3 films formed by anodic oxidation of DC-sputtered tungsten layers
000D28 (2009) Structure and optical properties of SnS thin film prepared by pulse electrodeposition
000E18 (2009) Investigation on martensitic transformation behavior, microstructures and mechanical properties of Fe-doped Ni-Mn-In alloys
000E77 (2009) Fabrication and Characterization of 1.3-μm InAs Quantum-Dot VCSELs and Monolithic VCSEL Arrays
000F55 (2009) An all-solid-state electrochromic device based on NiO/WO3 complementary structure and solid hybrid polyelectrolyte
000F89 (2008) Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems
001057 (2008) Preparation of Cr-doped Ba4In2O7/In2O3 nanocomposite and its photo-assisted chargeability in hydrogen storage alloy/photocatalyst electrode
001091 (2008) Morphology effect on the electrochromic and electrochemical performances of NiO thin films
001165 (2008) Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction
001214 (2008) Characterization of a-plane InN film grown on r-plane sapphire by MOCVD
001300 (2007) Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition
001956 (2004) Sol-gel preparation of poly(ethylene glycol) doped indium tin oxide thin films for sensing applications
001958 (2004) Similarity of plasma conditions of some Ne-like X-ray lasers and their partner Ni-like X-ray lasers
001D26 (2002) Synthesis of oxygen-deficient indium-tin-oxide (ITO) nanofibers
001D28 (2002) Synthesis and photoluminescence of single-crystalline In2O3 nanowires
001D58 (2002) Large-scale synthesis of In2O3 nanowires
001F40 (2001) Highly sensitive spectrofluorimetric determination of trace amounts of indium with 5-bromine-salicylaldehyde salicyloylhygrazone
002352 (1998) The influences of polyoxyethylene ether on the corrosion behavior of Zn-In alloy in an alkaline solution
002399 (1998) High power 980 nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion
002405 (1998) Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
002415 (1998) Effect of oxygen concentration and annealing treatment on the optical properties of the transparent conductive CdIn2O4 thin films
002544 (1996-11-15) High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells
002621 (1996) Determination of charge transfer distance by potential-step chronoamperospectrometry in a Nafion® film containing Ru(bpy)32+ complex
002627 (1996) (5-benzyldibenzo[b,d]phosphole 5-oxide)-trimethylindium
002820 (1993) Structure of InxGa1-xAs/GaAs strained-layer superlattices
002886 (1992) Characterization of InxGa1-xAs/GaAs strained-layer superlattices by transmission electron microscopy and convergent beam electron diffraction
002902 (1991) Photomodulated transmission spectroscopy of the intersubband transitions in strained In1-xGaxAs/GaAs multiple quantum wells under hydrostatic pressure

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