Documents par ordre de pertinence

001F10 (2001)		Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
001F20 (2001)		Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
001F85 (2000-12-18)		Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells
002007 (2000-07-10)		Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy
001747 (2005)		Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy
001776 (2005)		Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells
001A55 (2003-12-15)		Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices
001C03 (2003)		GalnNAs: Growth and characterization
002046 (2000)		Wavelength-tunable narrow-linewidth semiconductor fiber-ring laser

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.