Le cluster Shiou-Ying Cheng - Wen-Chau Liu
| 001F13 (2001) | Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor | |
| 002150 (1999-12-01) | Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors | |
| 002151 (1999-12-01) | Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors | |
| 002181 (1999-07-05) | Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor | |
| 001E74 (2001-01-15) | Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor | |
| 002031 (2000-03) | Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor | |
| 002177 (1999-07-26) | Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors | |
| 002192 (1999-04-12) | Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors | |
| 002193 (1999-04-05) | Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors | |
| 001F94 (2000-11) | Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors | |
| 002305 (1998-09-07) | Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors | |
| 001C83 (2002-05) | Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors | |
| 001E41 (2001-08-13) | Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications | |
| 001911 (2004-03) | Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors | |
| 001A39 (2004) | Characteristics of an InP-InGaAs-InGaAsP HBT | |
| 001A63 (2003-11) | Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes | |
| 002182 (1999-07) | Superlatticed negative differential-resistance heterojunction bipolar transistor | |
| 002649 (1995-07-17) | Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure | |
| 002673 (1995-03-20) | Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure | |
| 001B18 (2003-01) | Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures | |
| 002674 (1995-03-15) | Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch | |
| 002763 (1994-05-16) | GaAs-InGaAs quantum-well resonant-tunneling switching device grown by molecular beam epitaxy |
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