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Serveur d'exploration sur l'Indium

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Le cluster Liann-Be Chang - Ming-Jer Jeng

Terms

6Liann-Be Chang
4Ming-Jer Jeng
12Ray-Ming Lin
9Tzer-En Nee
8Chia-Ming Lee
22Jen-Inn Chyi
9Chang-Cheng Chuo
5Nien-Tze Yeh

Associations

Freq.WeightAssociation
40.816Liann-Be Chang - Ming-Jer Jeng
40.471Liann-Be Chang - Ray-Ming Lin
60.577Ray-Ming Lin - Tzer-En Nee
80.603Chia-Ming Lee - Jen-Inn Chyi
50.589Chang-Cheng Chuo - Chia-Ming Lee
70.497Chang-Cheng Chuo - Jen-Inn Chyi
50.477Jen-Inn Chyi - Nien-Tze Yeh
40.284Jen-Inn Chyi - Tzer-En Nee
Documents par ordre de pertinence
001C57 (2002-10-15) Localized and quantum-well state excitons in AlInGaN laser-diode structure
001C85 (2002-05) Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy
001D00 (2002-02-18) Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing
001E46 (2001-06-01) Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes
001E67 (2001-02-15) Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
001E72 (2001-01-15) Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells
002040 (2000-01-17) Stimulated emission study of InGaN/GaN multiple quantum well structures
002152 (1999-12-01) Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer
002153 (1999-12-01) Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer
002206 (1999-01) Room-temperature operation of In0.5Ga0.5As as quantum dot lasers grown on misoriented GaAs substrates by molecular beam epitaxy
002209 (1999-01) Photoluminescence characteristics of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates
002210 (1999-01) Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots
002750 (1994-08-08) Molecular-beam epitaxial growth of InxAl1-xAs on GaAs
001876 (2004-06-21) Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes
001888 (2004-05) Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy
001912 (2004-03) Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers
001A64 (2003-10-27) Response to Comment on AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy [Appl. Phys. Lett. 83, 3626 (2003)]
001B00 (2003-05) Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes
001B06 (2003-03-24) In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K
001C82 (2002-05) Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs
001D07 (2002-01-28) InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy
001E49 (2001-05-15) Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures
001F86 (2000-12-04) Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures
001F91 (2000-11-06) Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
002154 (1999-12-01) Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments
000023 (2014) Influence of Pre-trimethylindium flow treatment on blue light emitting diode
000038 (2014) Characterizations of chemical bath-deposited zinc oxysulfide films and the effects of their annealing on copper-indium-gallium-selenide solar cell efficiency
001898 (2004-04-05) Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
001917 (2004-02-15) Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
001A65 (2003-10-27) Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers
001C58 (2002-10-15) Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
001C79 (2002-06-10) Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
001F93 (2000-11) Study of current leakage in InAs p-i-n photodetectors
002010 (2000-06-19) Mechanism of luminescence in InGaN/GaN multiple quantum wells
002324 (1998-04-27) Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier
002453 (1997-07-01) Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates
002466 (1997-03) InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy
Wicri

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