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Serveur d'exploration sur l'Indium

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Le cluster Shih-Wei Feng - Yen-Sheng Lin

Terms

9Shih-Wei Feng
6Yen-Sheng Lin
14C. C. Yang
9Yung-Chen Cheng
5Yi-Yin Chung
4En-Chiang Lin
6Kung-Jen Ma
4Kung-Jeng Ma

Associations

Freq.WeightAssociation
60.816Shih-Wei Feng - Yen-Sheng Lin
90.802C. C. Yang - Yung-Chen Cheng
90.802C. C. Yang - Shih-Wei Feng
70.778Shih-Wei Feng - Yung-Chen Cheng
50.745Yi-Yin Chung - Yung-Chen Cheng
50.745Shih-Wei Feng - Yi-Yin Chung
40.730Yen-Sheng Lin - Yi-Yin Chung
50.680Yen-Sheng Lin - Yung-Chen Cheng
40.816En-Chiang Lin - Kung-Jen Ma
50.680Kung-Jen Ma - Shih-Wei Feng
40.667Kung-Jeng Ma - Yung-Chen Cheng
40.667Kung-Jeng Ma - Shih-Wei Feng
60.655C. C. Yang - Yen-Sheng Lin
60.655C. C. Yang - Kung-Jen Ma
50.598C. C. Yang - Yi-Yin Chung
40.544Kung-Jen Ma - Yung-Chen Cheng
Documents par ordre de pertinence
001A92 (2003-06-15) Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells
001C58 (2002-10-15) Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
001C79 (2002-06-10) Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
001C92 (2002-04-08) Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells
001A60 (2003-11-10) Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31
001B08 (2003-03-03) Strong green luminescence in quaternary InAlGaN thin films
001F91 (2000-11-06) Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
001884 (2004-05-15) Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing
001898 (2004-04-05) Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
002040 (2000-01-17) Stimulated emission study of InGaN/GaN multiple quantum well structures
001873 (2004-06-28) Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
001571 (2006) Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
001D55 (2002) Melting enthalpy depression of nanocrystals
002636 (1995-10-09) Nonlinear polarization switching in a semiconductor single quantum well optical amplifier
Wicri

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