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Serveur d'exploration sur l'Indium

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Le cluster K. Wang - Y. Gu

Terms

5K. Wang
7Y. Gu
17Y. G. Zhang
42A. Z. Li
14J. X. Chen
4Y. C. Ren
4Q. K. Yang
4G. Y. Xu

Associations

Freq.WeightAssociation
50.845K. Wang - Y. Gu
70.642Y. G. Zhang - Y. Gu
50.542K. Wang - Y. G. Zhang
140.577A. Z. Li - J. X. Chen
40.535J. X. Chen - Y. C. Ren
40.535J. X. Chen - Q. K. Yang
140.524A. Z. Li - Y. G. Zhang
40.485G. Y. Xu - Y. G. Zhang
50.345A. Z. Li - K. Wang
50.292A. Z. Li - Y. Gu
Documents par ordre de pertinence
000078 (2013) The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm
000274 (2013) Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors
000D67 (2009) Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE
000D81 (2009) Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures
000D84 (2009) Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range
002272 (1999) GSMBE grown infrared quantum cascade laser structures
002378 (1998) Novel In0.49Ga0.51P./(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy
001368 (2007) Key issues associated with low threshold current density for InP-based quantum cascade lasers
001784 (2005) Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy
001842 (2005) Continuous-wave operation quantum cascade lasers at 7.95 μm
001B30 (2003) The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors
001F09 (2001) Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers
001F44 (2001) Gsmbe growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT
001F66 (2001) Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE
002103 (2000) Growth and characterization of high-quality GaInAs/AlInAs triple wells
002588 (1996) The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE
002599 (1996) Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE
002613 (1996) Improved performance of InAlAs-InGaAs-InP MSM photodetectors with graded superlattice structure grown by gas source MBE
000330 (2013) Absorption coefficients of In0.8Ga0.2As at room temperature and 77 K
000619 (2012) Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well
001810 (2005) Heat management of MBE-grown antimonide lasers
001B95 (2003) High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
001F27 (2001) MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes
002027 (2000-03-15) Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures
002333 (1998-03-23) Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy
002548 (1996-11-01) Photoluminescence studies of InGaAs/InAlAs strained double quantum wells
002552 (1996-10-15) Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy
000730 (2011) Quantum dot lasers grown by gas source molecular-beam epitaxy
000E48 (2009) Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy
001C25 (2003) Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs
001D60 (2002) Interband impact ionization in THz-driven InAs/AlSb heterostructures
001E87 (2001) Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers
001F25 (2001) Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy
001F68 (2001) Band-structure and optical gain for InAsp/In(GaAs)P MQW laser structures
002062 (2000) Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100)
002221 (1999) The effect of strain on the miscibility gap in Ga-In-Sb ternary alloy
002501 (1997) MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures
002560 (1996-08-12) Demonstration of light-hole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy
002581 (1996-01-01) Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures
002602 (1996) Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells
002604 (1996) Observation of excitonic polaritons in quaternary GaInAsSb/AlGaAsSb multiple quantum wells
002618 (1996) Exciton line broadening and intersubband absorption in quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
002629 (1995-12-04) Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
002632 (1995-11-01) Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
002707 (1995) Molecular beam epitaxial growth, characterization and performance of high-detectivity GaInAsSb/GaSb PIN detectors operating at 2.0 to 2.6 μm
Wicri

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