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Serveur d'exploration sur l'Indium

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Le cluster J. H. Chu - S. L. Guo

Terms

15J. H. Chu
11S. L. Guo
5Y. S. Gui
7L. J. Cui
4Z. P. Zhu
4Z. M. Huang
7N. Dai
9T. Lin

Associations

Freq.WeightAssociation
110.856J. H. Chu - S. L. Guo
50.674S. L. Guo - Y. S. Gui
40.603S. L. Guo - Z. M. Huang
40.756L. J. Cui - Z. P. Zhu
40.756L. J. Cui - Z. M. Huang
50.577J. H. Chu - Y. S. Gui
50.570L. J. Cui - S. L. Guo
40.516J. H. Chu - Z. M. Huang
50.488J. H. Chu - L. J. Cui
40.390J. H. Chu - N. Dai
50.630N. Dai - T. Lin
40.344J. H. Chu - T. Lin
Documents par ordre de pertinence
001250 (2007) Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well
001318 (2007) Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well
001E29 (2001-09-17) Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
001E37 (2001-08-27) Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates
000B42 (2010) Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure
001C88 (2002-04-29) Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements
000619 (2012) Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well
001749 (2005) Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
001B37 (2003) Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
002027 (2000-03-15) Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures
001092 (2008) Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film
001648 (2006) Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
002469 (1997-02-01) Magneto-transport properties of semiconductors from flatband magnetocapacitance spectroscopy
002500 (1997) Magnetic-field-inducer carrier freeze-out in narrow-gap semiconductors analysed by capacitance spectroscopy
000073 (2013) Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
000A93 (2010) Magnetoresistance in a nominally undoped InGaN thin film
000C09 (2010) Dielectric functions and the interband critical points of InAs0.05Sb0.95 film grown by a modified LPE technique
000E13 (2009) Large reversible magnetocaloric effect in Tb2In
001329 (2007) Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion
001794 (2005) Influence of Si3N4 and ZnS films on transmittance of InAsSb/InAsPSb heterostructures
001A08 (2004) Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD
001A24 (2004) Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD
002571 (1996-04-01) Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures
002735 (1994-12-15) Hole subband in p-type channel of semiconductor heterostructures
Wicri

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