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Serveur d'exploration sur l'Indium

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Le cluster PEIDE HAN - ZHEN CHEN

Terms

7PEIDE HAN
7ZHEN CHEN
17XIANGLIN LIU
11XIAOHUI WANG
11QINSHENG ZHU
7HAIRONG YUAN
4DU WANG
7Da-Cheng Lu

Associations

Freq.WeightAssociation
60.857PEIDE HAN - ZHEN CHEN
110.804XIANGLIN LIU - XIAOHUI WANG
110.804QINSHENG ZHU - XIANGLIN LIU
70.798XIAOHUI WANG - ZHEN CHEN
70.798HAIRONG YUAN - XIAOHUI WANG
40.756DU WANG - ZHEN CHEN
40.756DU WANG - PEIDE HAN
50.714HAIRONG YUAN - ZHEN CHEN
50.714Da-Cheng Lu - HAIRONG YUAN
60.684PEIDE HAN - XIAOHUI WANG
70.642XIANGLIN LIU - ZHEN CHEN
70.642HAIRONG YUAN - XIANGLIN LIU
40.603DU WANG - XIAOHUI WANG
40.571HAIRONG YUAN - PEIDE HAN
40.571Da-Cheng Lu - ZHEN CHEN
50.570Da-Cheng Lu - XIAOHUI WANG
60.550PEIDE HAN - XIANGLIN LIU
40.485DU WANG - XIANGLIN LIU
50.458Da-Cheng Lu - XIANGLIN LIU
50.455QINSHENG ZHU - XIAOHUI WANG
Documents par ordre de pertinence
001D19 (2002) The mechanism of blueshift in excitation-intensity-dependent photoluminescence spectrum of nitride multiple quantum wells
001D37 (2002) Statistical investigation on morphology development of gallium nitride in initial growth stage
001F32 (2001) Indium doping effect on GaN in the initial growth stage
001B43 (2003) Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
001D18 (2002) The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method
001952 (2004) Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition
001E10 (2002) A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition
001A29 (2004) Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure
002095 (2000) In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE
001A34 (2004) Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition
000059 (2013) Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells
000518 (2012) Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
000785 (2011) MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
000C62 (2009) Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution
001183 (2008) Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
001674 (2006) Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
001B46 (2003) Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate
000296 (2013) Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature
001D42 (2002) Quasi-thermodynamic analysis of MOVPE growth of GaxAlyIn1-x-yN
002639 (1995-09-11) Photoluminescence of ordered Ga0.5In0.5P grown by metalorganic vapor phase epitaxy
Wicri

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