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Serveur d'exploration sur l'Indium

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Le cluster T. M. Hsu - W.-H. Chang

Terms

13T. M. Hsu
10W.-H. Chang
15J.-I. Chyi
7N. T. Yeh
5C. Y. Lai

Associations

Freq.WeightAssociation
100.877T. M. Hsu - W.-H. Chang
90.735J.-I. Chyi - W.-H. Chang
70.734N. T. Yeh - T. M. Hsu
60.717N. T. Yeh - W.-H. Chang
100.716J.-I. Chyi - T. M. Hsu
50.707C. Y. Lai - W.-H. Chang
50.620C. Y. Lai - T. M. Hsu
60.586J.-I. Chyi - N. T. Yeh
50.577C. Y. Lai - J.-I. Chyi
Documents par ordre de pertinence
001C94 (2002-04-01) Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot
002000 (2000-09-15) Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots
001916 (2004-02-16) Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells
001D11 (2002-01-01) Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy
001E30 (2001-09-15) Charging of embedded InAs self-assembled quantum dots by space-charge techniques
001E60 (2001-03-19) Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots
001F88 (2000-11-15) Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots
002037 (2000-02-07) Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing
002178 (1999-07-15) Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots
001886 (2004-05-10) Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature
001C55 (2002-11-15) Hole emission processes in InAs/GaAs self-assembled quantum dots
002025 (2000-03-20) Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures
001896 (2004-04-05) On the origin of spin loss in GaMnN/InGaN light-emitting diodes
001A90 (2003-06-16) Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells
002009 (2000-06-26) Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells
002652 (1995-07-01) Study of the optical properties of In0.52(AlxGa1-x)0.48As by variable angle spectroscopic ellipsometry
002682 (1995-02-15) Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs
002977 (1986) Study of CuInS grown by the traveling-heater method by electrolyte electroreflectance
Wicri

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