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Serveur d'exploration sur l'Indium

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Le cluster Hsi-Jen Pan - Wei-Chou Wang

Terms

9Hsi-Jen Pan
7Wei-Chou Wang
8Wen-Lung Chang
11Shiou-Ying Cheng
22Wen-Chau Liu
6Kun-Wei Lin
9Kuo-Hui Yu
6Jing-Yuh Chen

Associations

Freq.WeightAssociation
70.882Hsi-Jen Pan - Wei-Chou Wang
60.707Hsi-Jen Pan - Wen-Lung Chang
70.704Hsi-Jen Pan - Shiou-Ying Cheng
110.707Shiou-Ying Cheng - Wen-Chau Liu
60.684Shiou-Ying Cheng - Wei-Chou Wang
50.680Kun-Wei Lin - Kuo-Hui Yu
90.640Kuo-Hui Yu - Wen-Chau Liu
90.640Hsi-Jen Pan - Wen-Chau Liu
40.617Jing-Yuh Chen - Wei-Chou Wang
80.603Wen-Chau Liu - Wen-Lung Chang
70.564Wei-Chou Wang - Wen-Chau Liu
50.556Hsi-Jen Pan - Kuo-Hui Yu
40.544Hsi-Jen Pan - Jing-Yuh Chen
40.535Wei-Chou Wang - Wen-Lung Chang
50.533Shiou-Ying Cheng - Wen-Lung Chang
60.522Kun-Wei Lin - Wen-Chau Liu
60.522Jing-Yuh Chen - Wen-Chau Liu
40.504Kuo-Hui Yu - Wei-Chou Wang
50.503Kuo-Hui Yu - Shiou-Ying Cheng
40.492Jing-Yuh Chen - Shiou-Ying Cheng
40.471Kuo-Hui Yu - Wen-Lung Chang
Documents par ordre de pertinence
002181 (1999-07-05) Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor
001F13 (2001) Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor
002031 (2000-03) Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor
002177 (1999-07-26) Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors
001E74 (2001-01-15) Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor
002150 (1999-12-01) Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002151 (1999-12-01) Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002192 (1999-04-12) Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors
001F94 (2000-11) Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors
002193 (1999-04-05) Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors
002305 (1998-09-07) Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors
001A39 (2004) Characteristics of an InP-InGaAs-InGaAsP HBT
001C83 (2002-05) Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors
001E41 (2001-08-13) Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications
001911 (2004-03) Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors
001A63 (2003-11) Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes
001B18 (2003-01) Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures
002182 (1999-07) Superlatticed negative differential-resistance heterojunction bipolar transistor
002649 (1995-07-17) Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure
002673 (1995-03-20) Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure
002674 (1995-03-15) Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch
002763 (1994-05-16) GaAs-InGaAs quantum-well resonant-tunneling switching device grown by molecular beam epitaxy
Wicri

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