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Serveur d'exploration sur l'Indium

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Le cluster J. F. Chen - P. Y. Wang

Terms

9J. F. Chen
7P. Y. Wang
4N. C. Chen
13J. S. Wang

Associations

Freq.WeightAssociation
70.882J. F. Chen - P. Y. Wang
40.756N. C. Chen - P. Y. Wang
70.734J. S. Wang - P. Y. Wang
40.667J. F. Chen - N. C. Chen
70.647J. F. Chen - J. S. Wang
40.555J. S. Wang - N. C. Chen
Documents par ordre de pertinence
002038 (2000-02-01) Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence
002039 (2000-02-01) Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes
002164 (1999-10-18) Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wells
002195 (1999-03-01) Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well
001F92 (2000-11-06) Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots
002014 (2000-06-01) Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes
002173 (1999-08-23) Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature
001881 (2004-06) Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
001B99 (2003) Growth of nanoscale InGaN self-assembled quantum dots
001C81 (2002-05-13) Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP
001F95 (2000-10-15) Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well
002445 (1997-10-15) Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy
002663 (1995-05-22) Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor
002679 (1995-03) Characteristics of δ -doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors
002827 (1993) Molecular beam epitaxy growth of InAs-AlSb-GaSb interband tunneling diodes
Wicri

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