Serveur d'exploration sur l'Indium

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Le cluster W. X. Wang - X. Z. Shang

Terms

4W. X. Wang
5X. Z. Shang
4S. D. Wu
8L. W. Guo

Associations

Freq.WeightAssociation
40.894W. X. Wang - X. Z. Shang
40.894S. D. Wu - X. Z. Shang
50.791L. W. Guo - X. Z. Shang
40.707L. W. Guo - W. X. Wang
40.707L. W. Guo - S. D. Wu

Documents par ordre de pertinence
001595 (2006) Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy
001831 (2005) Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy
001A23 (2004) Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas
001609 (2006) InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
001976 (2004) Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source
001214 (2008) Characterization of a-plane InN film grown on r-plane sapphire by MOCVD
001300 (2007) Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition
001345 (2007) Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching

Wicri

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