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Serveur d'exploration sur l'Indium

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Le cluster GUOQING MIAO - HANG SONG

Terms

11GUOQING MIAO
11HANG SONG
9ZHIMING LI
13HONG JIANG
4SHUZHEN YU
5TIEMIN ZHANG
17YIXIN JIN
5XIAOJUAN SUN

Associations

Freq.WeightAssociation
100.909GUOQING MIAO - HANG SONG
90.905HANG SONG - ZHIMING LI
90.905GUOQING MIAO - ZHIMING LI
90.753HANG SONG - HONG JIANG
90.753GUOQING MIAO - HONG JIANG
40.894SHUZHEN YU - TIEMIN ZHANG
50.745TIEMIN ZHANG - ZHIMING LI
80.740HONG JIANG - ZHIMING LI
50.674HANG SONG - TIEMIN ZHANG
50.674GUOQING MIAO - TIEMIN ZHANG
100.673HONG JIANG - YIXIN JIN
40.667SHUZHEN YU - ZHIMING LI
50.620HONG JIANG - TIEMIN ZHANG
40.603HANG SONG - SHUZHEN YU
40.603GUOQING MIAO - SHUZHEN YU
40.555HONG JIANG - SHUZHEN YU
50.542TIEMIN ZHANG - YIXIN JIN
40.539HANG SONG - XIAOJUAN SUN
40.539GUOQING MIAO - XIAOJUAN SUN
70.512GUOQING MIAO - YIXIN JIN
60.485YIXIN JIN - ZHIMING LI
40.485SHUZHEN YU - YIXIN JIN
60.439HANG SONG - YIXIN JIN
Documents par ordre de pertinence
000E20 (2009) Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition
000F05 (2009) Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique
000F62 (2009) A study of two-step growth and properties of In0.82Ga0.18As on InP
001186 (2008) Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD
001187 (2008) Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD
000808 (2011) Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
001123 (2008) Improved field emission characteristic of carbon nanotubes by an Ag micro-particle intermediation layer
000805 (2011) Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
000907 (2011) Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method
000C01 (2010) Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method
001A31 (2004) Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector
002224 (1999) The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors
002408 (1998) Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
002425 (1998) Analysis of the R0A product and detectivity in a GaInAsSb infrared photovoltaic detector
002589 (1996) Study of GaInAsSb epilayer by scanning electron acoustic microscopy
000187 (2013) Less contribution of nonradiative recombination in ZnO nails compared with rods
000733 (2011) Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector
001398 (2007) Fabrication of microrods and microtips of InP by electrochemical etching
001A41 (2004) Calculation of the R0A product in n+-n-p and p+-p-n GaAnAsSb infrared detectors
001C13 (2003) Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy
001C29 (2003) Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots
001C42 (2003) Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors
002229 (1999) Study of overgrowth heterostructure InSb/GaAs by scanning electron acoustic microscopy
Wicri

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