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Serveur d'exploration sur l'Indium

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Le cluster D. H. Jaw - J. R. Chang

Terms

5D. H. Jaw
6J. R. Chang
4Y. T. Lu
9S. J. Chang
28Y. K. Su
4S. C. Shei

Associations

Freq.WeightAssociation
50.913D. H. Jaw - J. R. Chang
40.816J. R. Chang - Y. T. Lu
60.463J. R. Chang - Y. K. Su
80.504S. J. Chang - Y. K. Su
50.423D. H. Jaw - Y. K. Su
40.378Y. K. Su - Y. T. Lu
40.378S. C. Shei - Y. K. Su
Documents par ordre de pertinence
002179 (1999-07-12) Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy
002187 (1999-06-07) High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy
002200 (1999-02-01) Determination of the valence-band offset for GaInAsSb/InP heterostructure
001A94 (2003-06-02) Observation of self-organized superlattice in AlGaInAsSb pentanary alloys
002149 (1999-12-15) GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy
002455 (1997-06-01) Optical and structural characterization of InAs/GaSb superlattices
001890 (2004-05) InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer
001891 (2004-05) Growth of InGaN self-assembled quantum dots and their application to photodiodes
001914 (2004-02-23) Observation of spontaneous ordering in the optoelectronic material GaInNP
001997 (2004) InGaN/GaN multi-quantum dot light-emitting diodes
001B99 (2003) Growth of nanoscale InGaN self-assembled quantum dots
002311 (1998-07) Reactive ion etching for AlGalnP/GaInP laser structures
002648 (1995-08-01) Observation of quantum confined Stark effect in InxGa1-xAs/GaAs single-quantum well by photoreflectance spectroscopy
002659 (1995-06-15) Study on symmetry forbidden transitions in an InxGa1-xAs/GaAs single quantum well by temperature dependence
002677 (1995-03) High quality ZnO thin films on InP substrates prepared by radio frequency magnetron sputtering. II. Surface acoustic wave device fabrication
002678 (1995-03) High quality ZnO thin films on InP substrates prepared by radio frequency magnetron sputtering. I. Material study
002775 (1994-01) Comparing reactive ion etching of III-V compounds in Cl2/BCl3/Ar and CCl2F2/BCl3/Ar discharges
002866 (1992) Low-frequency noise in InP-based NnPnN double heterojunction bipolar transistors
001862 (2005) A novel transparent ohmic contact of indium tin oxide to n-type GaN
001E56 (2001-04-01) Temperature-dependent electroluminescence in poly [2-methoxy-5(2′-ethylhexyloxy)-p-phenylenevinylene] light-emitting diode
002186 (1999-06-15) 1/f noise measurements on indium antimonide metal-oxide-semiconductor field-effect transistors
002299 (1998-11) BCl3/Ar reactive ion etching for gate recessing of GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors
002312 (1998-06-22) Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN
002458 (1997-05-15) Characteristics of InxGa1-xAs/GaAs pseudomorphic modulation doped field effect transistor
002471 (1997-01-15) Origins of 1/f noise in indium antimonide photodiodes
002740 (1994-10-15) Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition
002745 (1994-09-01) Window layer for current spreading in AlGaInP light-emitting diode
002849 (1992) The effects of growth pressure and substrate temperature upon InxGa1-xSb epilayer quality grown by MOCVD
002885 (1992) Collector-emitter offset voltage in single- and double-base InGaAs(P)/InP heterojunction bipolar transistors
Wicri

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