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Serveur d'exploration sur l'Indium

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Le cluster X. Q. Meng - Z. Y. Zhang

Terms

8X. Q. Meng
7Z. Y. Zhang
23P. Jin
60B. Xu
83Z. G. Wang
41Y. H. Chen
31X. L. Ye
6C. L. Zhang

Associations

Freq.WeightAssociation
70.935X. Q. Meng - Z. Y. Zhang
70.552P. Jin - Z. Y. Zhang
550.779B. Xu - Z. G. Wang
340.583Y. H. Chen - Z. G. Wang
200.538B. Xu - P. Jin
230.533B. Xu - X. L. Ye
270.532X. L. Ye - Z. G. Wang
230.526P. Jin - Z. G. Wang
70.516P. Jin - X. Q. Meng
220.444B. Xu - Y. H. Chen
50.426C. L. Zhang - P. Jin
60.381X. L. Ye - X. Q. Meng
50.339X. L. Ye - Z. Y. Zhang
120.337X. L. Ye - Y. H. Chen
90.337P. Jin - X. L. Ye
70.320B. Xu - X. Q. Meng
80.310X. Q. Meng - Z. G. Wang
60.293B. Xu - Z. Y. Zhang
70.290Z. G. Wang - Z. Y. Zhang
50.264B. Xu - C. L. Zhang
70.228P. Jin - Y. H. Chen
50.224C. L. Zhang - Z. G. Wang
Documents par ordre de pertinence
001832 (2005) Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001)
001A07 (2004) Growth of nanostructures on composition-modulated InAlAs surfaces
001B29 (2003) The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
001C46 (2003) Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
001D85 (2002) Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
001D88 (2002) Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm
001E08 (2002) A novel application to quantum dot materials to the active region of superluminescent diodes
001863 (2005) A novel method for positioning of InAs islands on GaAs (110)
001E05 (2002) A novel line-order of InAs quantum dots on GaAs
000C08 (2010) Different growth mechanisms of bimodal InAs/GaAs QDs
000C34 (2010) Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density
001522 (2006) Temperature dependence of surface quantum dots grown under frequent growth interruption
001539 (2006) Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate
001579 (2006) Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001687 (2006) Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots
001711 (2005) The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots
001791 (2005) Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001923 (2004) Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy
001973 (2004) Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer
001998 (2004) InAs nanostructure grown with different growth rate in InAlAs matrix on InP (001) substrate
001C33 (2003) Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser
001D34 (2002) Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
001E38 (2001-08-15) Thermal redistribution of photocarriers between bimodal quantum dots
002058 (2000) Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
002059 (2000) Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
000A05 (2010) Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density
000B16 (2010) Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
001009 (2008) Temperature dependence of surface quantum dots grown under frequent growth interruption
001094 (2008) Mn-including InAs quantum dots fabricated by Mn implantation
001444 (2007) Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers
001484 (2007) Anomalous photoluminescence of InAs quantum dots implanted by Mn ions
001594 (2006) MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
001598 (2006) Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate
001713 (2005) The effect of In content on high-density InxGa1-xAs quantum dots
001B90 (2003) In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate
001B91 (2003) In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate
001C24 (2003) Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate
001D61 (2002) Influence of strain on annealing effects of In(Ga)As quantum dots
001F06 (2001) Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
001F21 (2001) Optical properties of InGaAs quantum dots formed on InAlAs wetting layer
001F31 (2001) Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy
002048 (2000) Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate
002063 (2000) Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates
002070 (2000) Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy
002137 (2000) Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
002274 (1999) Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy
002374 (1998) Optical anisotropy of InAs submonolayer quantum wells in a (311)GaAs matrix
002446 (1997-09-15) Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix
000149 (2013) Photoluminescence properties of porous InP filled with ferroelectric polymers
000351 (2012) Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows
000381 (2012) Tailoring the in-plane epitaxial relationship of InN films on (1 11)SrTiO3 substrates by substrate pretreatment
000B24 (2010) InN layers grown by MOCVD on SrTi03 substrates
000B75 (2010) Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
000D91 (2009) Observation of the surface circular photogalvanic effect in InN films
001211 (2008) Circular photogalvanic effect at inter-band excitation in InN
001524 (2006) Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
001849 (2005) Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions
001B45 (2003) Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer
001D62 (2002) Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots
001D87 (2002) Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
001F46 (2001) Growth and characterization of InGaAs/InAlAs quantum cascade lasers
002068 (2000) Self-assembled InAs quantum wires on InP(001)
002071 (2000) Room temperature (34 °C) operation of strain-compensated quantum cascade lasers
002116 (2000) Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer
002125 (2000) Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots
002228 (1999) Substrate surface atomic structure influence on the growth of InAlAs quantum dots
002253 (1999) Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) : Special issue papers on quantum dots
002267 (1999) InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(0 0 1)
002426 (1998) Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy
002441 (1997-11) Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer
000997 (2010) The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy
000A51 (2010) SELF-ASSEMBLING OF INAS QUANTUM DOTS ON GAAS(001) IN MOLECULAR BEAM EPITAXY
000C25 (2010) Blue-shift photoluminescence from porous InAlAs
000C37 (2010) A study of indium incorporation in In-rich InGaN grown by MOVPE
000F52 (2009) Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates
000F53 (2009) Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition
000F98 (2008) The martensitic transformation and the magnetocaloric effect in Ni50-xMn38+xIn12 alloys
001399 (2007) Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices
001621 (2006) Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
001658 (2006) Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
001767 (2005) Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells
001782 (2005) Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates
001807 (2005) High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array
001E42 (2001-07-15) Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs
002064 (2000) Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots
002067 (2000) Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy
002075 (2000) Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size
002160 (1999-11-08) Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing
002235 (1999) Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers : Special issue papers on quantum dots
002246 (1999) Quantum-dot superluminescent diode : A proposal for an ultra-wide output spectrum
002265 (1999) Indium composition dependence of size uniformity of InGaAs quantum dots on (311)B GaAs grown by means of molecular beam epitaxy
002309 (1998-08-01) Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes
002335 (1998-03-09) Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy
002341 (1998-01-19) Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure
002391 (1998) InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy
002638 (1995-09-15) Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers
002646 (1995-08-07) Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure
002660 (1995-06-15) Photoreflectance study on the two-dimensional electron gas of InAlAs/InGaAs heterojunction bipolar transistor grown by molecular beam epitaxy
002664 (1995-05-15) Photoreflectance characterization of graded InAlAs/InGaAs heterojunction bipolar transistor layers
002767 (1994-04-11) Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor
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