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Serveur d'exploration sur l'Indium

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Le cluster H. Ogawa - Q. X. Guo

Terms

8H. Ogawa
8Q. X. Guo
17W. G. Tang
32W. Z. Shen
29S. C. Shen
7Y. Chang
13Y. Zhao
6S. Jiang

Associations

Freq.WeightAssociation
81.000H. Ogawa - Q. X. Guo
80.500Q. X. Guo - W. Z. Shen
170.729W. G. Tang - W. Z. Shen
160.721S. C. Shen - W. G. Tang
60.550W. G. Tang - Y. Chang
160.525S. C. Shen - W. Z. Shen
80.500H. Ogawa - W. Z. Shen
60.421S. C. Shen - Y. Chang
60.404W. G. Tang - Y. Zhao
60.401W. Z. Shen - Y. Chang
50.379S. C. Shen - S. Jiang
70.343W. Z. Shen - Y. Zhao
60.309S. C. Shen - Y. Zhao
Documents par ordre de pertinence
002560 (1996-08-12) Demonstration of light-hole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy
002602 (1996) Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells
002604 (1996) Observation of excitonic polaritons in quaternary GaInAsSb/AlGaAsSb multiple quantum wells
002548 (1996-11-01) Photoluminescence studies of InGaAs/InAlAs strained double quantum wells
002581 (1996-01-01) Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures
002597 (1996) Photoluminescence studies of CuInSe2
002618 (1996) Exciton line broadening and intersubband absorption in quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
002629 (1995-12-04) Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
002632 (1995-11-01) Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
001420 (2007) Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy
001673 (2006) Critical point transitions of wurtzite indium nitride
001933 (2004) Temperature effects on optical properties of InN thin films
001978 (2004) Optical and electrical properties of InN thin films grown by reactive magnetron sputtering
001984 (2004) Micro-raman study of hexagonal InN thin films grown by reactive sputtering on GaAs
001990 (2004) Lattice vibrational properties of InN thin films
001A16 (2004) Experimental studies of lattice dynamical properties in indium nitride
001D68 (2002) Growth-dependent phonon characteristics in InN thin films
002651 (1995-07-15) Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells
002701 (1995) Room-temperature excitons in strained InGaAs/GaAs quantum wells
002704 (1995) Photoluminescence studies of modulation-doped In0.60Ga0.40As/In0.52Al0.48As strained multiple quantum wells
002721 (1995) Exciton line broadening in strained InGaAs/GaAs single quantum wells
002738 (1994-11-21) Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells
002776 (1994) optical and transport properties of δ-doped pseudomorphic AlGaAs/InGaAs/GaAs structures
002796 (1994) Influence of the cap layer thickness on photoluminescence properties in strained INGaAs/GaAs single quantum wells
002501 (1997) MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures
002671 (1995-04-10) Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells
002703 (1995) Photomodulated transmission spectroscopy of InxGa1-xAs/GaAs MQWs under hydrostatic pressure
002752 (1994-07-18) Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells
002782 (1994) The Fermi-edge singularity in CdTe/Cd1-xMnxTe:In multiple quantum wells
002789 (1994) Optical studies of strained InGaAs/GaAs single quantum wells
002902 (1991) Photomodulated transmission spectroscopy of the intersubband transitions in strained In1-xGaxAs/GaAs multiple quantum wells under hydrostatic pressure
000909 (2011) Effect of acetic acid on ZnO:In transparent conductive oxide prepared by ultrasonic spray pyrolysis
000A84 (2010) Observation of spin-dependent quantum jumps via quantum dot resonance fluorescence
000C13 (2010) Deposition behavior on the barrier layer of porous anodic alumina
000E02 (2009) Multi-carrier transport properties in p-type ZnO thin films
000F82 (2008) Weak Localization in Indium Nitride Films
001277 (2007) Temperature-dependent photoluminescence of undoped, N-doped and N-in codoped ZnO thin films
001351 (2007) Multiple confined-state transitions within surface quantum dots by a piezomodulation reflectance study
001524 (2006) Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
001939 (2004) Synthesis and Characterization of Single-Crystalline In2O 3 Nanocrystals via Solution Dispersion
001A58 (2003-11-24) Enhancement of room-temperature photoluminescence in InAs quantum dots
001B89 (2003) InGaN/GaN MQW high brightness LED grown by MOCVD
001C25 (2003) Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs
001E07 (2002) A novel approach for the evaluation of band gap energy in semiconductors
001E21 (2001-11-15) Phonon-induced photoconductive response in doped semiconductors
002026 (2000-03-15) Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
002284 (1999) Effect of erbium concentration on upconversion luminescence of Er:Yb :phosphate glass exited by InGaAs laser diode
002333 (1998-03-23) Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy
002552 (1996-10-15) Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy
002573 (1996-03-04) Transient photovoltaic properties in Al/tin-phthalocyanine/indium-tin-oxide sandwich cell
002578 (1996-01-29) Alloy composition dependence of photoexcited carrier dynamics in GaxIn1-xP/InP:Fe (x<0.18)
002643 (1995-08-15) Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy
002792 (1994) Modulated cyclotron resonance in multi-quantum well structure of In0.53Ga0.47As/InP induced by interband and exciton excitation
Wicri

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