Le cluster HONGLING XIAO - XIAOLIANG WANG

Terms

11	HONGLING XIAO
11	XIAOLIANG WANG
8	CUIMEI WANG
12	JINMIN LI
4	QINGWEN DENG
6	XUN HOU
4	QIFENG HOU
4	JUNXUE RAN

Associations

Freq.	Weight	Association
11	1.000	HONGLING XIAO - XIAOLIANG WANG
8	0.853	CUIMEI WANG - XIAOLIANG WANG
8	0.853	CUIMEI WANG - HONGLING XIAO
8	0.696	JINMIN LI - XIAOLIANG WANG
8	0.696	HONGLING XIAO - JINMIN LI
6	0.612	CUIMEI WANG - JINMIN LI
4	0.816	QINGWEN DENG - XUN HOU
4	0.603	QINGWEN DENG - XIAOLIANG WANG
4	0.603	QIFENG HOU - XIAOLIANG WANG
4	0.603	JUNXUE RAN - XIAOLIANG WANG
4	0.603	HONGLING XIAO - QINGWEN DENG
4	0.603	HONGLING XIAO - QIFENG HOU
4	0.603	HONGLING XIAO - JUNXUE RAN
4	0.577	JINMIN LI - QIFENG HOU
4	0.577	JINMIN LI - JUNXUE RAN
4	0.492	XIAOLIANG WANG - XUN HOU
4	0.492	HONGLING XIAO - XUN HOU

Documents par ordre de pertinence

000665 (2011)		Theoretical study on InxGa1-xN/GaN quantum dots solar cell
000948 (2011)		An investigation on IXxGa1-xN/GaN multiple quantum well solar cells
000940 (2011)		Behavioural investigation of InN nanodots by surface topographies and phase images
000F96 (2008)		Theoretical design and performance of InxGa1-xN two-junction solar cells
001308 (2007)		Simulation of In0.65Ga0.35 N single-junction solar cell
000072 (2013)		Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell
001326 (2007)		Photovoltaic effects in InGaN structures with p-n junctions
001440 (2007)		Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
000419 (2012)		Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures
001813 (2005)		Growth and characterization of InN on sapphire substrate by RF-MBE
001264 (2007)		The influence of internal electric fields on the transition energy of InGaN/GaN quantum well
000024 (2014)		Improved performance of lateral GaN-based light emitting diodes with novel buried CBL structure in ITO film and reflective electrodes
000E35 (2009)		Improving the stability of organic light-emitting devices using a solution-processed hole-injecting layer
000F74 (2009)		A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film
001122 (2008)		Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching
001184 (2008)		Effect of indium tin oxide (ITO) current spreading layer on the current uniformity of vertical structure GaN-based light-emitting diodes
002241 (1999)		Self-organization of the InGaAs/GaAs quantum dots superlattice

Wicri

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