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Serveur d'exploration sur l'Indium

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Le cluster Ming-Yuan Wu - Po-Hsun Lei

Terms

4Ming-Yuan Wu
4Po-Hsun Lei
16Meng-Chyi Wu
10Wen-Jeng Ho
4Lung-Chien Chen

Associations

Freq.WeightAssociation
41.000Ming-Yuan Wu - Po-Hsun Lei
40.632Po-Hsun Lei - Wen-Jeng Ho
100.791Meng-Chyi Wu - Wen-Jeng Ho
40.632Ming-Yuan Wu - Wen-Jeng Ho
40.500Meng-Chyi Wu - Po-Hsun Lei
40.500Meng-Chyi Wu - Ming-Yuan Wu
40.500Lung-Chien Chen - Meng-Chyi Wu
Documents par ordre de pertinence
001577 (2006) Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes
001A56 (2003-12-15) Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AIGaInAs Graded-Composition Layers
001A91 (2003-06-15) Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes
001C87 (2002-05) 1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region
001C78 (2002-06-15) Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes
002196 (1999-03) Growth and characterization of high-quality InAs0.86Sb0.05P0.09 alloy by liquid-phase epitaxy
002301 (1998-10) Thermal properties of InAs0.86Sb0.05P0.09 homostructure diodes
001963 (2004) Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure
001A79 (2003-08-18) Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K
002184 (1999-06-28) Light-induced negative differential resistance in planar InP/InGaAs/InP double-heterojunction p-i-n photodiode
002295 (1998-11-15) Raman scattering of InAs1-x-ySbxPy quaternary alloys
002162 (1999-11) Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition
002294 (1998-12) Facet-coating effects on the 1.3-μm strained multiple-quantum-well AlGaInAs/InP laser diodes
002321 (1998-06) High-temperature and low-threshold-current operation of 1.5 μm AlGaInAs/InP strain-compensated multiple quantum well laser diodes
002657 (1995-07) Annealing-induced near-surface ordering in disordered Ga0.5In0.5P
002689 (1995-01-15) Liquid-phase epitaxial growth and characterization of InGaAsP layers grown on GaAsP substrates for application to orange light-emitting diodes
Wicri

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