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Serveur d'exploration sur l'Indium

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Le cluster G. J. Jan - H. H. Lin

Terms

8G. J. Jan
20H. H. Lin
14J. C. Fan
34Y. F. Chen
5J. L. Shen
4Y. T. Dai
4S. C. Lee
7C. H. Chen

Associations

Freq.WeightAssociation
70.553G. J. Jan - H. H. Lin
100.383H. H. Lin - Y. F. Chen
110.504J. C. Fan - Y. F. Chen
50.383J. L. Shen - Y. F. Chen
40.343Y. F. Chen - Y. T. Dai
40.343S. C. Lee - Y. F. Chen
50.324C. H. Chen - Y. F. Chen
40.239H. H. Lin - J. C. Fan
Documents par ordre de pertinence
002439 (1997-11-01) Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses
002640 (1995-08-28) Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance
002666 (1995-05-08) Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance
001F95 (2000-10-15) Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well
002298 (1998-11-01) Photoconductivity in self-organized InAs quantum dots
002309 (1998-08-01) Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes
002335 (1998-03-09) Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy
002336 (1998-02-15) Studies of two-subband occupied electron gas in modulation-doped In0.52Al0.48As/In0.53Ga0.47As single quantum well by far-infrared modulated photoluminescence
002661 (1995-06-15) Cyclotron-resonance studies in relaxed InxGa1-xAs (0≤x≤1) epilayers
002686 (1995-02-01) Photoluminescence study of highly mismatched In0.53Ga0.47As epilayers grown on InP-coated GaAs substrates
002755 (1994-07-15) Raman-line-shape study of InxGa1-xAs on InP and GaAs substrates
001897 (2004-04-05) Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells
001910 (2004-03-01) Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary epilayers
001A74 (2003-09-01) Piezoelectric, electro-optical, and photoelastic effects in InxGa1-xN/GaN multiple quantum wells
001A93 (2003-06-02) Temperature dependence of photoreflectance in InAs/GaAs quantum dots
001B05 (2003-03-24) Persistent photoconductivity in InxAlyGa1-x-yN quaternary alloys
001C68 (2002-08-15) Degree of ordering in Al0.5In0.5P by Raman scattering
001C81 (2002-05-13) Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP
001C97 (2002-02-25) Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys
001D02 (2002-02-04) Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x
002159 (1999-11-08) Persistent photoconductivity in InGaP/GaAs heterostructures
002167 (1999-09-15) Positive and negative persistent photoconductivities in semimetallic AlxGa1-xSb/InAs quantum wells
002194 (1999-03-08) The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures
002203 (1999-01-15) Persistent photoconductivity in semimetallic AlxGa1-xSb/InAs quantum wells
002541 (1996-12-15) Enhancement of conduction-band effective mass in III-V semiconductor alloys induced by chemical disorder
002563 (1996-07-15) Effect of disorder-induced band mixing on the conduction-band effective mass of InAlGaAs alloys lattice matched to InP
002574 (1996-02-19) Observation of double cyclotron resonance in modulation-δ-doped In0.52Al0.48As/In0.53Ga0.47As heterostructure by optical detection
002638 (1995-09-15) Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers
002644 (1995-08-15) Observation of spin-splitting crossing between subbands in the optically detected cyclotron-resonance spectra of In0.53Ga0.47As/In0.52Al0.48As heterojunctions
002664 (1995-05-15) Photoreflectance characterization of graded InAlAs/InGaAs heterojunction bipolar transistor layers
002767 (1994-04-11) Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor
001331 (2007) Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition
001483 (2007) As-doped p-type ZnO films prepared by cosputtering ZnO and Zn3As2 targets
001890 (2004-05) InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer
001A81 (2003-08-11) Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers
001A89 (2003-06-23) Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
001E71 (2001-01-15) Persistent photoconductivity in InGaN/GaN multiquantum wells
002010 (2000-06-19) Mechanism of luminescence in InGaN/GaN multiple quantum wells
002038 (2000-02-01) Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence
002157 (1999-11-15) Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well
002299 (1998-11) BCl3/Ar reactive ion etching for gate recessing of GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors
002343 (1998-01-01) Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies
002445 (1997-10-15) Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy
002472 (1997-01-01) Temperature dependence of quantized states in an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure
002555 (1996-09-15) Effective mass of two-dimensional electron gas in δ-doped Al0.48In0.52As/Ga0.47In0.53As quantum wells
002579 (1996-01-15) Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers
002635 (1995-10-16) Study of surface Fermi level and surface state distribution in InAlAs surface-intrinsic-n+ structure by photoreflectance
002660 (1995-06-15) Photoreflectance study on the two-dimensional electron gas of InAlAs/InGaAs heterojunction bipolar transistor grown by molecular beam epitaxy
002760 (1994-06-13) Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures
002866 (1992) Low-frequency noise in InP-based NnPnN double heterojunction bipolar transistors
Wicri

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