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Serveur d'exploration sur l'Indium

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Le cluster H. M. Shieh - W. C. Hsu

Terms

8H. M. Shieh
12W. C. Hsu
4M. J. Kao
5Y. S. Lin

Associations

Freq.WeightAssociation
60.612H. M. Shieh - W. C. Hsu
40.577M. J. Kao - W. C. Hsu
40.516W. C. Hsu - Y. S. Lin
Documents par ordre de pertinence
002017 (2000-05-22) In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors
002323 (1998-05) Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers
002773 (1994-01) Influences of δ -doping time and spacer thickness on the mobility and two-dimensional electron gas concentration in δ -doped GaAs/InGaAs/GaAs pseudomorphic heterostructures
002156 (1999-11-29) Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer
002169 (1999-09-13) High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor
002558 (1996-08-15) Photoinduced electron coupling in δ-doped GaAs/In0.18Ga0.82As quantum wells
002663 (1995-05-22) Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor
002679 (1995-03) Characteristics of δ -doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors
002684 (1995-02-06) Very strong negative differential resistance real-space transfer transistor using a multiple δ-doping GaAs/InGaAs pseudomorphic heterostructure
002762 (1994-05-30) Mobility enhancement in double δ-doped GaAs/InxGa1-xAs/GaAs pseudomorphic structures by grading the heterointerfaces
002772 (1994-01-01) Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice
001A52 (2003-12-29) Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor
001C96 (2002-03-18) Real index-guided InGaAlP red lasers with buried tunnel junctions
001E70 (2001-02-12) Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers
002688 (1995-01-16) A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base
Wicri

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