Freq.	Weight	Association
4	0.676	LIANG PAN - MEIYING KONG
5	0.598	MEIYING KONG - YIPING ZENG

Documents par ordre de pertinence

001E79 (2001)		Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure
001F14 (2001)		Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer
001F41 (2001)		High-quality metamorphic HEMT grown on GaAs substrates by MBE
002241 (1999)		Self-organization of the InGaAs/GaAs quantum dots superlattice
002346 (1998)		Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(0 0 1) substrate measured by a series of symmetric double crystal X-ray diffraction
002413 (1998)		Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE
000011 (2014)		Structural effect on controllable resistive memory switching in donor-acceptor polymer systems
000479 (2012)		Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer
000B35 (2010)		Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride as hole injection layer
001122 (2008)		Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching
001440 (2007)		Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
001813 (2005)		Growth and characterization of InN on sapphire substrate by RF-MBE
002797 (1994)		High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy

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