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Serveur d'exploration sur l'Indium

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Le cluster Y. F. Li - Z. Z. Sun

Terms

9Y. F. Li
6Z. Z. Sun
9W. H. Jiang
16D. Ding
11H. Y. Liu
21F. Q. Liu
8Y. C. Zhang
28J. Wu

Associations

Freq.WeightAssociation
50.680Y. F. Li - Z. Z. Sun
50.680W. H. Jiang - Z. Z. Sun
60.667W. H. Jiang - Y. F. Li
80.667D. Ding - W. H. Jiang
50.615H. Y. Liu - Z. Z. Sun
60.603H. Y. Liu - W. H. Jiang
110.600D. Ding - F. Q. Liu
50.589Y. C. Zhang - Y. F. Li
50.589W. H. Jiang - Y. C. Zhang
70.583D. Ding - Y. F. Li
70.540F. Q. Liu - Y. C. Zhang
60.530D. Ding - Y. C. Zhang
70.528D. Ding - H. Y. Liu
70.509F. Q. Liu - Y. F. Li
50.503H. Y. Liu - Y. F. Li
60.436F. Q. Liu - W. H. Jiang
40.356F. Q. Liu - Z. Z. Sun
50.315J. Wu - W. H. Jiang
40.263F. Q. Liu - H. Y. Liu
50.236D. Ding - J. Wu
Documents par ordre de pertinence
002048 (2000) Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate
002063 (2000) Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates
002070 (2000) Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy
002058 (2000) Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
002059 (2000) Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
001E38 (2001-08-15) Thermal redistribution of photocarriers between bimodal quantum dots
002274 (1999) Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy
001F21 (2001) Optical properties of InGaAs quantum dots formed on InAlAs wetting layer
002125 (2000) Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots
001F06 (2001) Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
001F31 (2001) Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy
002137 (2000) Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
001D61 (2002) Influence of strain on annealing effects of In(Ga)As quantum dots
001F46 (2001) Growth and characterization of InGaAs/InAlAs quantum cascade lasers
002068 (2000) Self-assembled InAs quantum wires on InP(001)
002071 (2000) Room temperature (34 °C) operation of strain-compensated quantum cascade lasers
002116 (2000) Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer
002426 (1998) Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy
000149 (2013) Photoluminescence properties of porous InP filled with ferroelectric polymers
000A51 (2010) SELF-ASSEMBLING OF INAS QUANTUM DOTS ON GAAS(001) IN MOLECULAR BEAM EPITAXY
000C09 (2010) Dielectric functions and the interband critical points of InAs0.05Sb0.95 film grown by a modified LPE technique
000C25 (2010) Blue-shift photoluminescence from porous InAlAs
001005 (2008) The defect density of a SiNx /In0.53Ga0.47As interface passivated using (NH4)2Sx
001092 (2008) Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film
001165 (2008) Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction
001377 (2007) Improved contrast polymer light-emitting diode with optical interference layers
001594 (2006) MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
001832 (2005) Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001)
001923 (2004) Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy
001998 (2004) InAs nanostructure grown with different growth rate in InAlAs matrix on InP (001) substrate
001B29 (2003) The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
001B33 (2003) Synthesis and gas sensitivity of In-doped ZnO nanoparticles
001B45 (2003) Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer
001C33 (2003) Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser
001C40 (2003) Atomic and electronic structure of (√3 x √3)R 30°: In phase on Cu(111)
001D34 (2002) Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
001D59 (2002) Interface magnetic properties of epitaxial Fe-InAs heterostructures
001D62 (2002) Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots
002064 (2000) Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots
002115 (2000) Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
002228 (1999) Substrate surface atomic structure influence on the growth of InAlAs quantum dots
002253 (1999) Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) : Special issue papers on quantum dots
002265 (1999) Indium composition dependence of size uniformity of InGaAs quantum dots on (311)B GaAs grown by means of molecular beam epitaxy
002267 (1999) InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(0 0 1)
002341 (1998-01-19) Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure
002391 (1998) InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy
002429 (1998) Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice
002441 (1997-11) Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer
002461 (1997-05-05) Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice
002507 (1997) Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice
002510 (1997) Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices
002568 (1996-05-15) Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition
002605 (1996) Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice
002646 (1995-08-07) Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure
Wicri

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