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Serveur d'exploration sur l'Indium

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Le cluster L. Y. Lin - Q. D. Zhuang

Terms

7L. Y. Lin
4Q. D. Zhuang
10J. M. Li
10M. Y. Kong
28Y. P. Zeng
6B. Q. Wang

Associations

Freq.WeightAssociation
40.756L. Y. Lin - Q. D. Zhuang
70.700J. M. Li - M. Y. Kong
40.632M. Y. Kong - Q. D. Zhuang
40.632J. M. Li - Q. D. Zhuang
100.598M. Y. Kong - Y. P. Zeng
40.478L. Y. Lin - M. Y. Kong
80.478J. M. Li - Y. P. Zeng
40.478J. M. Li - L. Y. Lin
60.463B. Q. Wang - Y. P. Zeng
40.378Q. D. Zhuang - Y. P. Zeng
50.357L. Y. Lin - Y. P. Zeng
Documents par ordre de pertinence
002115 (2000) Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
002122 (2000) Effect of rapid thermal annealing on InGaAs/GaAs quantum wells
002232 (1999) Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures
002235 (1999) Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers : Special issue papers on quantum dots
001C88 (2002-04-29) Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements
002461 (1997-05-05) Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice
002507 (1997) Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice
002605 (1996) Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice
000A51 (2010) SELF-ASSEMBLING OF INAS QUANTUM DOTS ON GAAS(001) IN MOLECULAR BEAM EPITAXY
001648 (2006) Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
001709 (2005) The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE
001E29 (2001-09-17) Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
001E37 (2001-08-27) Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates
002379 (1998) New method for the growth of highly uniform quantum dots
002510 (1997) Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices
002526 (1997) Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE
000500 (2012) Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays
000763 (2011) Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots
000A93 (2010) Magnetoresistance in a nominally undoped InGaN thin film
001250 (2007) Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well
001318 (2007) Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well
001579 (2006) Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001767 (2005) Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells
001791 (2005) Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001A42 (2004) Annealing ambient controlled deep defect formation in InP
001B13 (2003-02-03) Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity
001B90 (2003) In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate
001B91 (2003) In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate
001C24 (2003) Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate
001C69 (2002-08-15) Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance
001D45 (2002) Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour
002068 (2000) Self-assembled InAs quantum wires on InP(001)
Wicri

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