Phosphatidylserines < Phosphines < Phosphinic Acids

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List of bibliographic references

Number of relevant bibliographic references: 131.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000431 (2013)		Fluorescent nanowire heterostructures as a versatile tool for biology applications.
000445 (2013)		InP/ZnS-graphene oxide and reduced graphene oxide nanocomposites as fascinating materials for potential optoelectronic applications.
000468 (2013)		Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes.
000619 (2013)		Uniformity of the lasing wavelength of heterogeneously integrated InP microdisk lasers on SOI.
000632 (2013)		Structural and optical investigation of GaInP quantum dots according to the growth thickness for the 700 nm light emitters.
000652 (2013)		Modeling on the size dependent properties of InP quantum dots: a hybrid functional study.
000654 (2013)		Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
000715 (2013)		Experimental demonstration of self-aligned InP/InGaAsP polarization converter for polarization multiplexed photonic integrated circuits.
000750 (2013)		Integrated InP frequency discriminator for Phase-modulated microwave photonic links.
000828 (2013)		Electronic properties of pure and p-type doped hexagonal sheets and zigzag nanoribbons of InP.
000877 (2013)		III-V nanocrystals capped with molecular metal chalcogenide ligands: high electron mobility and ambipolar photoresponse.
000879 (2012)		Monolithic InP strictly non-blocking 8×8 switch for high-speed WDM optical interconnection.
000880 (2012)		Serial 100 Gb/s connectivity based on polymer photonics and InP-DHBT electronics.
000921 (2012)		Nitrogen ion implanted InP based photo-switch.
000935 (2013)		InP/ZnS as a safer alternative to CdSe/ZnS core/shell quantum dots: in vitro and in vivo toxicity assessment.
000989 (2012)		Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires.
000A00 (2012)		InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.
000A07 (2012)		170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits.
000A08 (2012)		Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation.
000A87 (2012)		Interplay between crystal phase purity and radial growth in InP nanowires.
000A94 (2012)		Fully integrated InGaAs/InP single-photon detector module with gigahertz sine wave gating.

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