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Serveur d'exploration sur l'Indium - Curation (Accueil)

Index « Keywords » - entrée « InP »
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Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
InGaN < InP < InP thermal stability  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
000263 (1994) High performance InP JFETs grown by MOCVD using tertiarybutylphosphine
000295 (1993) Hydrogen sulfide plasma passivation of indium phosphide
000317 (1988) Behaviour of erbium implanted in InP
000450 (1975) Zone melting of indium phosphide
000493 (1986) OMVPE growth of InP and Ga0.47ln0.53as using ethyldimethylindium
000519 (1981) The use of a metalorganic compound for the growth of InP-epitaxial layers
000595 (1987) Phosphorus-overpressure rapid thermal annealing of indium phosphide
000627 (1987) The effect of zn on inp surfaces during diffusion
000669 (1993) The influence of indium tin oxide deposition on the transport properties at InP junctions
000693 (1995) Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy
000709 (1991) MLEK crystal growth of (100) indium phosphide
000841 (1987) Simultaneous SIMS/AES Measurements for the Characterization of Multilayer Systems
000849 (1996) A unique, device-friendly contact system for shallow junction p/n indium phosphide devices
000983 (1992) The role of outdiffusion in the activation of high dose Mg implantations in InP
000A52 (1975) Liquid encapsulated czochralski pulling of InP crystals
000A73 (1993) The influence of indium tin oxide deposition on the transport properties at InP junctions
000B03 (1990) Properties of spin-on glass as an insulator for InP metal-insulator-semiconductor structures
000C35 (1990) Bulk growth of polycrystalline indium phosphide
000D05 (1991) Growth and characterization of indium arsenide thin films
000E52 (1983) High- Purity inp grown by hydride vpe technique with impurity gettering by indium source and oxygen

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