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Serveur d'exploration sur le cadmium en France - Curation (Accueil)

Index « AbsEn.i » - entrée « annealing »
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List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]
Ident.Authors (with country if any)Title
000351 (1989) F. Raoult [France] ; B. Fortin [France] ; Y. Colin [France]Standardization and stabilization of the resistivity-temperature characteristics of CdSe thin films by vacuum annealing
000425 (2000) G. Sasikala [Italie, Inde] ; P. Thilakan [Italie] ; C. Subramanian [Inde]Modification in the chemical bath deposition apparatus, growth and characterization of CdS semiconducting thin films for photovoltaic applications
000630 (1979) R.O. Bell [États-Unis] ; M. Toulemonde [France] ; P. Siffert [France]Calculated temperature distribution during laser annealing in silicon and cadmium telluride
000760 (1983) G.L. Destefanis [France]Ion implantation in Hg1−xCdxTe
000811 (1989) M. Neumann-Spallart [France] ; G. Tamizhmani [France] ; A. Boutry-Forveille [France] ; C. Levy-Clement [France]Physical properties of electrochemically deposited cadmium mercury telluride films
000859 (1995) D. Ballutaud [France] ; C. Debiemme-Chouvy [France] ; A. Etcheberry [France] ; P. de Mierry [France] ; L. Svob [France]Reactivity of III–V and II–VI semiconductors toward hydrogen: surface modification and evolution in air
000877 (1957) J.A. Beun [Suisse] ; R. Nitsche [Suisse] ; H.U. Bölsterli [Suisse]Aftertreatment of CdS single crystals grown by vapour transport with iodine
000881 (1995) Z. Djuric [Yougoslavie]Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te
000A10 (1986) Shailaja Kolhe [Inde] ; S.K. Kulkarni [Inde] ; M.G. Takwale [Inde] ; V.G. Bhide [Inde]The electrical conduction insprayed CdS films
000A92 (1999) A. Kampmann [Allemagne] ; A. Abken [Allemagne] ; G. Leimkühler [Allemagne] ; J. Rechid [Allemagne] ; V. Sittinger [Allemagne] ; T. Wietler [Allemagne] ; R. Reineke‐Koch [Allemagne]A cadmium‐free CuInSe2 superstrate solar cell fabricated by electrodeposition using a ITO/In2Se3/CuInSe2/Au structure
000B70 (1976) E. Grieshaber [Allemagne] ; R. Nitsche [Allemagne] ; A. Bubenzer [Allemagne]New compounds with icosahedral structures of the type Cd14-xP4S24-2xI2x
000C48 (1996) F. Debbagh [Maroc] ; E.L. Ameziane [Maroc] ; M. Azizan [Maroc] ; M. Brunel [France] ; T.T.A. Nguyen [France]Some annealing effects on r.f. sputtered Cu/Te/CdTe structure
000C98 (1996) E. Rzepka [France] ; A. Lusson [France] ; A. Riviere [France] ; A. Aoudia [France] ; Y. Marfaing [France] ; R. Triboulet [France]Defects study by photoluminescence and cathodoluminescence in vanadium doped CdZnTe
000D11 (2000) C. Lepiller [France] ; P. Cowache [France] ; J.F. Guillemoles [France] ; N. Gibson [Italie] ; E. Özsan [Royaume-Uni] ; D. Lincot [France]Fast electrodeposition route for cadmium telluride solar cells
000D51 (2000) Osvaldo Vigil ; Francisco Cruz ; Guillermo Santana [Mexique, Cuba] ; Lı́dice Vaillant [Cuba] ; Arturo Morales-Acevedo [Mexique] ; Gerardo Contreras-PuenteInfluence of post-thermal annealing on the properties of sprayed cadmium–zinc oxide thin films
000D85 (2000) M.Y. El Azhari [Maroc] ; M. Azizan [Maroc] ; A. Bennouna [Maroc] ; A. Outzourhit [Maroc] ; E.L. Ameziane [Maroc] ; M. Brunel [France]Preparation and characterization of CdTeO3 thin films
000E61 (2000) M.D.G. Potter [Royaume-Uni] ; D.P. Halliday [Royaume-Uni] ; M. Cousins [Royaume-Uni] ; K. Durose [Royaume-Uni]A study of the effects of varying cadmium chloride treatment on the luminescent properties of CdTe/CdS thin film solar cells
000E95 (1993) J. Lajzerowicz [France] ; L. Verger [France] ; F. Mathy [France] ; M. Cuzin [France]Power switching with CdTe:Cl
000E97 (1991) C. Bouchenaki [France] ; B. Ullrich [France] ; J.P. Zielinger [France]Luminescence investigations performed on differently prepared thin CdS layers
000F03 (1987) B. Biglari [France] ; M. Samimi [France] ; M. Hage-Ali [France] ; P. Siffert [France]Passivation of high-resistivity cadmium telluride by hydrogen implantation
000F73 (1991) G.N. Pain ; C.J. Rossouw ; S.R. Glanvill ; R.S. Rowe ; R.S. Dickson ; G.B. Deacon ; B.O. WestHRTEM studies of defects and interdiffusion in Hg1−x− y Mn y Cd x Te (O⩽ x , y ⩽1) grown by low temperature MOCVD

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