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Serveur d'exploration sur le cadmium en France - Curation (Accueil)

Index « AbsEn.i » - entrée « acceptor »
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List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000557 (2001) Olaf Korth [Allemagne] ; Thomas Hanke [Allemagne] ; Jörg von Gersdorff [Allemagne] ; Harry Kurreck [Allemagne] ; Beate Röder [Allemagne]Photoinduced electron transfer in Langmuir–Blodgett films between the donor [5,10,15,20-tetra(pentyl-oxy-biphenyl-oxy- m -phenyl)-porphyrinato]zinc(II) and quinone acceptors, either separated or linked by a cyclohexylene-bridge
000612 (1987) J.W. Bixler [États-Unis] ; M.E. Cobb [États-Unis] ; R.J. French [États-Unis] ; B.E. Morse [États-Unis] ; T.R. O'Toole [États-Unis] ; J.A. Schudel [États-Unis] ; G.A. Yogis [États-Unis] ; A.M. Bond [Australie]Stability sequences of cadmium(II) and zinc(II) monohalide complexes in alcohols and binary solvent mixtures containing methanol, dimethylsulfoxide, acetonitrile and water
000872 (2000) Régis Rouillon [France] ; Nathalie Boucher [France, Canada] ; Yves Gingras [Canada] ; Robert Carpentier [Canada]Potential for the use of photosystem II submembrane fractions immobilised in poly(vinylalcohol) to detect heavy metals in solution or in sewage sludge
000A10 (1986) Shailaja Kolhe [Inde] ; S.K. Kulkarni [Inde] ; M.G. Takwale [Inde] ; V.G. Bhide [Inde]The electrical conduction insprayed CdS films
000C76 (1992) W. Witthuhn [Allemagne]Dynamics and electronic transitions at impurity complexes in semiconductors
000C98 (1996) E. Rzepka [France] ; A. Lusson [France] ; A. Riviere [France] ; A. Aoudia [France] ; Y. Marfaing [France] ; R. Triboulet [France]Defects study by photoluminescence and cathodoluminescence in vanadium doped CdZnTe
000D44 (1971) E. Guesne [France] ; C. Sébenne [France] ; M. Balkanski [France]Electronic surface properties of CdSe single crystals under vacuum or oxygen
000D49 (2001) M. Dammak [Tunisie] ; D. Verstraeten [France] ; S. Alaya [Tunisie] ; A. Selmi [Tunisie] ; H. Maaref [Tunisie] ; J.C. Launay [France]A photoluminescence study of vanadium-related defects in n-type, semi-insulating and p-type Cd(Zn)Te
000E61 (2000) M.D.G. Potter [Royaume-Uni] ; D.P. Halliday [Royaume-Uni] ; M. Cousins [Royaume-Uni] ; K. Durose [Royaume-Uni]A study of the effects of varying cadmium chloride treatment on the luminescent properties of CdTe/CdS thin film solar cells
000E94 (1982) Swati Ray [Inde] ; Ratnabali Banerjee [Inde] ; A.K. Barua [Inde]Some properties of indium- and antimony-doped vacuum-evaporated CdS thin films
000E95 (1993) J. Lajzerowicz [France] ; L. Verger [France] ; F. Mathy [France] ; M. Cuzin [France]Power switching with CdTe:Cl
000F02 (1983) Malik Housin [France] ; Michel Fialin [France] ; Georges Sagnes [France] ; Gérard Bastide [France] ; M. Rouzeyre [France]Physical properties of the deep X electron trap responsible for long time persistent photocapacitance in CdS
000F76 (1996) V. Valdna [Estonie] ; J. Hiie [Estonie] ; U. Kallavus [Estonie] ; A. Mere [Estonie] ; T. Piibe [Estonie]ZnSe1 − x Te x solid solutions

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