The kinetics of the R- and UV-band photoconductivity (PC) in radiation damaged diamond
Identifieur interne : 001267 ( Istex/Corpus ); précédent : 001266; suivant : 001268The kinetics of the R- and UV-band photoconductivity (PC) in radiation damaged diamond
Auteurs : L. A. Vermeulen ; A. HalperinSource :
- Journal of Physics and Chemistry of Solids [ 0022-3697 ] ; 1984.
Abstract
Illumination in the UV-band of radiation damaged diamond was found to enhance the PC in the red (the RPC). Continuous R-illumination then caused the RPC to decay hyperbolically to zero. R-band illumination also enhanced the PC in the UV band (UPC). Continuous illumination in the UV-band then caused the UPC to decay to a level about half of the maximum UPC. A two-level model was proposed in which exchange of holes between the U- and R-levels via the valence band was assumed to take place under illumination. The differential equations obtained from the kinetics of the transitions were solved with some approximations, and were found to give an excellent agreement with the experimental results. Further support for the model was obtained from numerical integration of the differential equations. When compared with the experimental results this provided information on the crystal parameters involved. The transition rates for valence-band holes into the levels R and U were found to be: AR= UU = 2.3 × 10−11 m3sec−1, which gave for the capture-cross-sections at 290 K of these centres S = 3.2 × 10−17m2. Surprisingly low densities of the order of 1012m−3 were obtained for R and U, indicating that only a small fraction of the damage-produced defects play a role in the UPC and RPC.
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DOI: 10.1016/0022-3697(84)90074-X
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Halperin</name><affiliation><mods:affiliation>Solid State Physics Research Unit and Department of Physics, University of the Witwatersrand, Johannesburg, South Africa</mods:affiliation></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:96B15948FB73BA044EBCDC00DC9FDCB599BB2624</idno><date when="1984" year="1984">1984</date><idno type="doi">10.1016/0022-3697(84)90074-X</idno><idno type="url">https://api.istex.fr/document/96B15948FB73BA044EBCDC00DC9FDCB599BB2624/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">001267</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a">The kinetics of the R- and UV-band photoconductivity (PC) in radiation damaged diamond</title><author><name sortKey="Vermeulen, L A" sort="Vermeulen, L A" uniqKey="Vermeulen L" first="L. A." last="Vermeulen">L. A. Vermeulen</name><affiliation><mods:affiliation>Solid State Physics Research Unit and Department of Physics, University of the Witwatersrand, Johannesburg, South Africa</mods:affiliation></affiliation></author><author><name sortKey="Halperin, A" sort="Halperin, A" uniqKey="Halperin A" first="A." last="Halperin">A. Halperin</name><affiliation><mods:affiliation>Solid State Physics Research Unit and Department of Physics, University of the Witwatersrand, Johannesburg, South Africa</mods:affiliation></affiliation></author></analytic><monogr></monogr><series><title level="j">Journal of Physics and Chemistry of Solids</title><title level="j" type="abbrev">PCS</title><idno type="ISSN">0022-3697</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1984">1984</date><biblScope unit="volume">45</biblScope><biblScope unit="issue">7</biblScope><biblScope unit="page" from="771">771</biblScope><biblScope unit="page" to="779">779</biblScope></imprint><idno type="ISSN">0022-3697</idno></series><idno type="istex">96B15948FB73BA044EBCDC00DC9FDCB599BB2624</idno><idno type="DOI">10.1016/0022-3697(84)90074-X</idno><idno type="PII">0022-3697(84)90074-X</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0022-3697</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Illumination in the UV-band of radiation damaged diamond was found to enhance the PC in the red (the RPC). Continuous R-illumination then caused the RPC to decay hyperbolically to zero. R-band illumination also enhanced the PC in the UV band (UPC). Continuous illumination in the UV-band then caused the UPC to decay to a level about half of the maximum UPC. A two-level model was proposed in which exchange of holes between the U- and R-levels via the valence band was assumed to take place under illumination. The differential equations obtained from the kinetics of the transitions were solved with some approximations, and were found to give an excellent agreement with the experimental results. Further support for the model was obtained from numerical integration of the differential equations. When compared with the experimental results this provided information on the crystal parameters involved. The transition rates for valence-band holes into the levels R and U were found to be: AR= UU = 2.3 × 10−11 m3sec−1, which gave for the capture-cross-sections at 290 K of these centres S = 3.2 × 10−17m2. Surprisingly low densities of the order of 1012m−3 were obtained for R and U, indicating that only a small fraction of the damage-produced defects play a role in the UPC and RPC.</div></front></TEI><istex><corpusName>elsevier</corpusName><author><json:item><name>L.A. Vermeulen</name><affiliations><json:string>Solid State Physics Research Unit and Department of Physics, University of the Witwatersrand, Johannesburg, South Africa</json:string></affiliations></json:item><json:item><name>A. Halperin</name><affiliations><json:string>Solid State Physics Research Unit and Department of Physics, University of the Witwatersrand, Johannesburg, South Africa</json:string></affiliations></json:item></author><language><json:string>eng</json:string></language><abstract>Illumination in the UV-band of radiation damaged diamond was found to enhance the PC in the red (the RPC). Continuous R-illumination then caused the RPC to decay hyperbolically to zero. R-band illumination also enhanced the PC in the UV band (UPC). Continuous illumination in the UV-band then caused the UPC to decay to a level about half of the maximum UPC. A two-level model was proposed in which exchange of holes between the U- and R-levels via the valence band was assumed to take place under illumination. The differential equations obtained from the kinetics of the transitions were solved with some approximations, and were found to give an excellent agreement with the experimental results. Further support for the model was obtained from numerical integration of the differential equations. When compared with the experimental results this provided information on the crystal parameters involved. The transition rates for valence-band holes into the levels R and U were found to be: AR= UU = 2.3 × 10−11 m3sec−1, which gave for the capture-cross-sections at 290 K of these centres S = 3.2 × 10−17m2. Surprisingly low densities of the order of 1012m−3 were obtained for R and U, indicating that only a small fraction of the damage-produced defects play a role in the UPC and RPC.</abstract><qualityIndicators><score>7.556</score><pdfVersion>1.2</pdfVersion><pdfPageSize>540 x 792 pts</pdfPageSize><refBibsNative>true</refBibsNative><keywordCount>0</keywordCount><abstractCharCount>1288</abstractCharCount><pdfWordCount>5568</pdfWordCount><pdfCharCount>29465</pdfCharCount><pdfPageCount>9</pdfPageCount><abstractWordCount>213</abstractWordCount></qualityIndicators><title>The kinetics of the R- and UV-band photoconductivity (PC) in radiation damaged diamond</title><pii><json:string>0022-3697(84)90074-X</json:string></pii><genre><json:string>research-article</json:string></genre><serie><genre></genre><language><json:string>unknown</json:string></language><title>See for example</title></serie><host><volume>45</volume><pii><json:string>S0022-3697(00)X0241-7</json:string></pii><pages><last>779</last><first>771</first></pages><issn><json:string>0022-3697</json:string></issn><issue>7</issue><genre><json:string>Journal</json:string></genre><language><json:string>unknown</json:string></language><title>Journal of Physics and Chemistry of Solids</title><publicationDate>1984</publicationDate></host><categories><wos><json:string>PHYSICS, CONDENSED MATTER</json:string><json:string>CHEMISTRY</json:string><json:string>CHEMISTRY, MULTIDISCIPLINARY</json:string></wos></categories><publicationDate>1984</publicationDate><copyrightDate>1984</copyrightDate><doi><json:string>10.1016/0022-3697(84)90074-X</json:string></doi><id>96B15948FB73BA044EBCDC00DC9FDCB599BB2624</id><fulltext><json:item><original>true</original><mimetype>application/pdf</mimetype><extension>pdf</extension><uri>https://api.istex.fr/document/96B15948FB73BA044EBCDC00DC9FDCB599BB2624/fulltext/pdf</uri></json:item><json:item><original>true</original><mimetype>text/plain</mimetype><extension>txt</extension><uri>https://api.istex.fr/document/96B15948FB73BA044EBCDC00DC9FDCB599BB2624/fulltext/txt</uri></json:item><json:item><original>false</original><mimetype>application/zip</mimetype><extension>zip</extension><uri>https://api.istex.fr/document/96B15948FB73BA044EBCDC00DC9FDCB599BB2624/fulltext/zip</uri></json:item><istex:fulltextTEI uri="https://api.istex.fr/document/96B15948FB73BA044EBCDC00DC9FDCB599BB2624/fulltext/tei"><teiHeader><fileDesc><titleStmt><title level="a">The kinetics of the R- and UV-band photoconductivity (PC) in radiation damaged diamond</title></titleStmt><publicationStmt><authority>ISTEX</authority><publisher>ELSEVIER</publisher><availability><p>ELSEVIER</p></availability><date>1984</date></publicationStmt><sourceDesc><biblStruct type="inbook"><analytic><title level="a">The kinetics of the R- and UV-band photoconductivity (PC) in radiation damaged diamond</title><author><persName><forename type="first">L.A.</forename><surname>Vermeulen</surname></persName><note type="biography">Present address: MINTEK, Randburg, South Africa.</note><affiliation>Present address: MINTEK, Randburg, South Africa.</affiliation><affiliation>Solid State Physics Research Unit and Department of Physics, University of the Witwatersrand, Johannesburg, South Africa</affiliation></author><author><persName><forename type="first">A.</forename><surname>Halperin</surname></persName><note type="biography">Permanent address: The Racah Institute of Physics, The Hebrew University of Jerusalem, Israel.</note><affiliation>Permanent address: The Racah Institute of Physics, The Hebrew University of Jerusalem, Israel.</affiliation><affiliation>Solid State Physics Research Unit and Department of Physics, University of the Witwatersrand, Johannesburg, South Africa</affiliation></author></analytic><monogr><title level="j">Journal of Physics and Chemistry of Solids</title><title level="j" type="abbrev">PCS</title><idno type="pISSN">0022-3697</idno><idno type="PII">S0022-3697(00)X0241-7</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1984"></date><biblScope unit="volume">45</biblScope><biblScope unit="issue">7</biblScope><biblScope unit="page" from="771">771</biblScope><biblScope unit="page" to="779">779</biblScope></imprint></monogr><idno type="istex">96B15948FB73BA044EBCDC00DC9FDCB599BB2624</idno><idno type="DOI">10.1016/0022-3697(84)90074-X</idno><idno type="PII">0022-3697(84)90074-X</idno></biblStruct></sourceDesc></fileDesc><profileDesc><creation><date>1984</date></creation><langUsage><language ident="en">en</language></langUsage><abstract xml:lang="en"><p>Illumination in the UV-band of radiation damaged diamond was found to enhance the PC in the red (the RPC). Continuous R-illumination then caused the RPC to decay hyperbolically to zero. R-band illumination also enhanced the PC in the UV band (UPC). Continuous illumination in the UV-band then caused the UPC to decay to a level about half of the maximum UPC. A two-level model was proposed in which exchange of holes between the U- and R-levels via the valence band was assumed to take place under illumination. The differential equations obtained from the kinetics of the transitions were solved with some approximations, and were found to give an excellent agreement with the experimental results. Further support for the model was obtained from numerical integration of the differential equations. When compared with the experimental results this provided information on the crystal parameters involved. The transition rates for valence-band holes into the levels R and U were found to be: AR= UU = 2.3 × 10−11 m3sec−1, which gave for the capture-cross-sections at 290 K of these centres S = 3.2 × 10−17m2. Surprisingly low densities of the order of 1012m−3 were obtained for R and U, indicating that only a small fraction of the damage-produced defects play a role in the UPC and RPC.</p></abstract></profileDesc><revisionDesc><change when="1984">Published</change></revisionDesc></teiHeader></istex:fulltextTEI></fulltext><metadata><istex:metadataXml wicri:clean="Elsevier, elements deleted: tail"><istex:xmlDeclaration>version="1.0" encoding="utf-8"</istex:xmlDeclaration><istex:docType PUBLIC="-//ES//DTD journal article DTD version 4.5.2//EN//XML" URI="art452.dtd" name="istex:docType"></istex:docType><istex:document><converted-article version="4.5.2" docsubtype="fla"><item-info><jid>PCS</jid><aid>8490074X</aid><ce:pii>0022-3697(84)90074-X</ce:pii><ce:doi>10.1016/0022-3697(84)90074-X</ce:doi><ce:copyright type="unknown" year="1984"></ce:copyright></item-info><head><ce:title>The kinetics of the R- and UV-band photoconductivity (PC) in radiation damaged diamond</ce:title><ce:author-group><ce:author><ce:given-name>L.A.</ce:given-name><ce:surname>Vermeulen</ce:surname><ce:cross-ref refid="FN1"><ce:sup>†</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>A.</ce:given-name><ce:surname>Halperin</ce:surname><ce:cross-ref refid="FN2"><ce:sup>‡</ce:sup></ce:cross-ref></ce:author><ce:affiliation><ce:textfn>Solid State Physics Research Unit and Department of Physics, University of the Witwatersrand, Johannesburg, South Africa</ce:textfn></ce:affiliation><ce:footnote id="FN1"><ce:label>†</ce:label><ce:note-para>Present address: MINTEK, Randburg, South Africa.</ce:note-para></ce:footnote><ce:footnote id="FN2"><ce:label>‡</ce:label><ce:note-para>Permanent address: The Racah Institute of Physics, The Hebrew University of Jerusalem, Israel.</ce:note-para></ce:footnote></ce:author-group><ce:abstract><ce:section-title>Abstract</ce:section-title><ce:abstract-sec><ce:simple-para>Illumination in the UV-band of radiation damaged diamond was found to enhance the PC in the red (the RPC). Continuous R-illumination then caused the RPC to decay hyperbolically to zero. R-band illumination also enhanced the PC in the UV band (UPC). Continuous illumination in the UV-band then caused the UPC to decay to a level about half of the maximum UPC. A two-level model was proposed in which exchange of holes between the U- and R-levels via the valence band was assumed to take place under illumination. The differential equations obtained from the kinetics of the transitions were solved with some approximations, and were found to give an excellent agreement with the experimental results. Further support for the model was obtained from numerical integration of the differential equations. When compared with the experimental results this provided information on the crystal parameters involved. The transition rates for valence-band holes into the levels R and U were found to be: <ce:italic>A</ce:italic><ce:inf><ce:italic>R</ce:italic></ce:inf>= <ce:italic>U</ce:italic><ce:inf><ce:italic>U</ce:italic></ce:inf> = 2.3 × 10<ce:sup>−11</ce:sup> <ce:italic>m</ce:italic><ce:sup>3</ce:sup><ce:italic>sec</ce:italic><ce:sup>−1</ce:sup>, which gave for the capture-cross-sections at 290 K of these centres <ce:italic>S</ce:italic> = 3.2 × 10<ce:sup>−17</ce:sup><ce:italic>m</ce:italic><ce:sup>2</ce:sup>. Surprisingly low densities of the order of 10<ce:sup>12</ce:sup>m<ce:sup>−3</ce:sup> were obtained for R and U, indicating that only a small fraction of the damage-produced defects play a role in the UPC and RPC.</ce:simple-para></ce:abstract-sec></ce:abstract></head></converted-article></istex:document></istex:metadataXml><mods version="3.6"><titleInfo><title>The kinetics of the R- and UV-band photoconductivity (PC) in radiation damaged diamond</title></titleInfo><titleInfo type="alternative" contentType="CDATA"><title>The kinetics of the R- and UV-band photoconductivity (PC) in radiation damaged diamond</title></titleInfo><name type="personal"><namePart type="given">L.A.</namePart><namePart type="family">Vermeulen</namePart><affiliation>Solid State Physics Research Unit and Department of Physics, University of the Witwatersrand, Johannesburg, South Africa</affiliation><description>Present address: MINTEK, Randburg, South Africa.</description><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Halperin</namePart><affiliation>Solid State Physics Research Unit and Department of Physics, University of the Witwatersrand, Johannesburg, South Africa</affiliation><description>Permanent address: The Racah Institute of Physics, The Hebrew University of Jerusalem, Israel.</description><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="research-article" displayLabel="Full-length article"></genre><originInfo><publisher>ELSEVIER</publisher><dateIssued encoding="w3cdtf">1984</dateIssued><copyrightDate encoding="w3cdtf">1984</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm><languageTerm type="code" authority="rfc3066">en</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="en">Illumination in the UV-band of radiation damaged diamond was found to enhance the PC in the red (the RPC). Continuous R-illumination then caused the RPC to decay hyperbolically to zero. R-band illumination also enhanced the PC in the UV band (UPC). Continuous illumination in the UV-band then caused the UPC to decay to a level about half of the maximum UPC. A two-level model was proposed in which exchange of holes between the U- and R-levels via the valence band was assumed to take place under illumination. The differential equations obtained from the kinetics of the transitions were solved with some approximations, and were found to give an excellent agreement with the experimental results. Further support for the model was obtained from numerical integration of the differential equations. When compared with the experimental results this provided information on the crystal parameters involved. The transition rates for valence-band holes into the levels R and U were found to be: AR= UU = 2.3 × 10−11 m3sec−1, which gave for the capture-cross-sections at 290 K of these centres S = 3.2 × 10−17m2. Surprisingly low densities of the order of 1012m−3 were obtained for R and U, indicating that only a small fraction of the damage-produced defects play a role in the UPC and RPC.</abstract><relatedItem type="host"><titleInfo><title>Journal of Physics and Chemistry of Solids</title></titleInfo><titleInfo type="abbreviated"><title>PCS</title></titleInfo><genre type="Journal">journal</genre><originInfo><dateIssued encoding="w3cdtf">1984</dateIssued></originInfo><identifier type="ISSN">0022-3697</identifier><identifier type="PII">S0022-3697(00)X0241-7</identifier><part><date>1984</date><detail type="volume"><number>45</number><caption>vol.</caption></detail><detail type="issue"><number>7</number><caption>no.</caption></detail><extent unit="issue pages"><start>709</start><end>819</end></extent><extent unit="pages"><start>771</start><end>779</end></extent></part></relatedItem><identifier type="istex">96B15948FB73BA044EBCDC00DC9FDCB599BB2624</identifier><identifier type="DOI">10.1016/0022-3697(84)90074-X</identifier><identifier type="PII">0022-3697(84)90074-X</identifier><recordInfo><recordContentSource>ELSEVIER</recordContentSource></recordInfo></mods></metadata><enrichments><istex:catWosTEI uri="https://api.istex.fr/document/96B15948FB73BA044EBCDC00DC9FDCB599BB2624/enrichments/catWos"><teiHeader><profileDesc><textClass><classCode scheme="WOS">PHYSICS, CONDENSED MATTER</classCode><classCode scheme="WOS">CHEMISTRY</classCode><classCode scheme="WOS">CHEMISTRY, MULTIDISCIPLINARY</classCode></textClass></profileDesc></teiHeader></istex:catWosTEI></enrichments></istex></record>Pour manipuler ce document sous Unix (Dilib)
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