A silicon-based shear force sensor: development and characterization
Identifieur interne : 008319 ( Main/Merge ); précédent : 008318; suivant : 008320A silicon-based shear force sensor: development and characterization
Auteurs : Lin Wang [États-Unis] ; David J. Beebe [États-Unis]Source :
- Sensors & Actuators: A. Physical [ 0924-4247 ] ; 1999.
Abstract
A silicon-based shear force sensitive sensor is developed using microfabrication technology. Four ion-implanted piezoresistors are embedded in a silicon diaphragm and used as independent strain gauges. An epoxy mesa is built-up on top of the diaphragm to convert an applied force to a distributed stress. Both the normal and the shear components of an applied force can be resolved from the resistance changes induced by the stress. The sensor is tested when with a 0–3 N variant force is applied at elevation angles of 0°, 30°, 45° and 60°. At each elevation angle, the sensor is rotated from 0° to 360° at increments of 30°. Good linearity (R≈0.98) and good repeatability (STD≈3%) are observed. A sensor model is established in order to investigate the shear sensing ability and force measurement mechanism. The experimental results are in good agreement with the sensor model. Shear force sensing ability is demonstrated. In this paper, the sensor's design, fabrication and characterization are described. Based on the experimental data and the model, the sensor's shear sensitivity is discussed in detail.
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DOI: 10.1016/S0924-4247(99)00342-8
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