Microstructure fabrication on a -phase PVDF film by wet and dry etching technology
Identifieur interne : 002649 ( Main/Exploration ); précédent : 002648; suivant : 002650Microstructure fabrication on a -phase PVDF film by wet and dry etching technology
Auteurs : H. Han [Japon] ; Y. Nakagawa [Japon] ; Y. Takai [Japon] ; K. Kikuchi [Japon] ; S. Tsuchitani [Japon] ; Y. Kosimoto [Japon]Source :
- Journal of Micromechanics and Microengineering [ 0960-1317 ] ; 2012-08.
Abstract
We report a method of fabricating microstructures directly on a thin -phase polyvinylidene fluoride (PVDF) film without losing much of its piezoelectricity by employing wet and dry etching technologies. The piezoelectricity of PVDF depends greatly on the temperature, as is generally known. The process conditions, including the PVDF temperature history, were evaluated in experiments where there was almost no change in the PVDF film piezoelectric constant below 60C per 4h. The constant of d33in the range above 60C per 4h linearly deteriorated with the rise in temperature by 0.31012(C N1) C1and at a temperature of 100C per 4h deterioration of about 50 was confirmed. The N,N-dimethyl acetamide (DMA C4H9NO) solution was used as the etchant for wet etching, and O2plasma was used for the reactive ion etching (RIE). Tens to a hundred micrometer microstructures were easily fabricated with the proposed approach. The fabrication process technology and experimental results are also reported in detail.
Url:
DOI: 10.1088/0960-1317/22/8/085030
Affiliations:
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The piezoelectricity of PVDF depends greatly on the temperature, as is generally known. The process conditions, including the PVDF temperature history, were evaluated in experiments where there was almost no change in the PVDF film piezoelectric constant below 60C per 4h. The constant of d33in the range above 60C per 4h linearly deteriorated with the rise in temperature by 0.31012(C N1) C1and at a temperature of 100C per 4h deterioration of about 50 was confirmed. The N,N-dimethyl acetamide (DMA C4H9NO) solution was used as the etchant for wet etching, and O2plasma was used for the reactive ion etching (RIE). Tens to a hundred micrometer microstructures were easily fabricated with the proposed approach. The fabrication process technology and experimental results are also reported in detail.</div></front></TEI><affiliations><list><country><li>Japon</li></country></list><tree><country name="Japon"><noRegion><name sortKey="Han, H" sort="Han, H" uniqKey="Han H" first="H" last="Han">H. Han</name></noRegion><name sortKey="Kikuchi, K" sort="Kikuchi, K" uniqKey="Kikuchi K" first="K" last="Kikuchi">K. Kikuchi</name><name sortKey="Kosimoto, Y" sort="Kosimoto, Y" uniqKey="Kosimoto Y" first="Y" last="Kosimoto">Y. Kosimoto</name><name sortKey="Nakagawa, Y" sort="Nakagawa, Y" uniqKey="Nakagawa Y" first="Y" last="Nakagawa">Y. Nakagawa</name><name sortKey="Takai, Y" sort="Takai, Y" uniqKey="Takai Y" first="Y" last="Takai">Y. Takai</name><name sortKey="Tsuchitani, S" sort="Tsuchitani, S" uniqKey="Tsuchitani S" first="S" last="Tsuchitani">S. Tsuchitani</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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