Photocapacitance study of n‐GaAs/electrolyte interfaces
Identifieur interne : 005E97 ( Main/Merge ); précédent : 005E96; suivant : 005E98Photocapacitance study of n‐GaAs/electrolyte interfaces
Auteurs : P. Allongue [France] ; H. Cachet [France]Source :
- Berichte der Bunsengesellschaft für physikalische Chemie [ 0005-9021 ] ; 1987-04.
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Abstract
The electrochemical photocapacitance spectroscopy (EPS) is used to determine the interface state distribution at n‐GaAs/aqueous electrolyte junctions. Two states (Ec — 1.30eV and Ec — 1.05 eV) are found to be related to corrosion of GaAs. It is also shown that ruthenium induces additional states 0.2 eV above the valence band. A new insight of its effect on the stabilization of GaAs is given.
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DOI: 10.1002/bbpc.19870910430
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