Heteroepitaxy of GaSe layered semiconductor compound on Si (111) 7 × 7 substrate: a Van der Waals epitaxy?
Identifieur interne : 005301 ( Main/Merge ); précédent : 005300; suivant : 005302Heteroepitaxy of GaSe layered semiconductor compound on Si (111) 7 × 7 substrate: a Van der Waals epitaxy?
Auteurs : Le Thanh Vinh [France] ; M. Eddrief [France] ; C. Sébenne [France] ; A. Sacuto [France] ; M. Balkanski [France]Source :
- Journal of Crystal Growth [ 0022-0248 ] ; 1994.
Abstract
In a conventional heteroepitaxial system, the misfit between the lattice constants of two materials is a severe condition to overcome in order to get good heterostructures. Recently, Van der Waals epitaxy has been shown to relieve the lattice-mismatch stress by using materials which have strong bonding only in two dimensions. The Van der Waals epitaxy has so far been limited to quasi-one- or quasi-two-dimensional materials. We report, for the first time, the epitaxial growth of a GaSe layered semiconductor of Si(111)7 × 7, a substrate that is known to have active dangling bonds associated with the presence of adatoms along its surface. The film growth was performed by means of molecular-beam epitaxy and characterized in-situ by reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS), and ex-situ by Raman spectroscopy and X-ray diffraction. It has been shown that the epitaxial growth was strongly affected by the growth conditions. At a low growth temperature range, multi-domains were observed. This has been explained according to the film growth kinetics, in which the nucleation and the growth are competing processes. At a high flux of Se, a 3D growth was observed. It is related to the decrease of the surface diffusion length of Ga adatoms. Finally, the mechanism for the epitaxial growth of GaSe on Si(111)7 × 7 is discussed in terms of the balance of surface free energy between interface, film and substrate.
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DOI: 10.1016/0022-0248(94)90719-6
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Recently, Van der Waals epitaxy has been shown to relieve the lattice-mismatch stress by using materials which have strong bonding only in two dimensions. The Van der Waals epitaxy has so far been limited to quasi-one- or quasi-two-dimensional materials. We report, for the first time, the epitaxial growth of a GaSe layered semiconductor of Si(111)7 × 7, a substrate that is known to have active dangling bonds associated with the presence of adatoms along its surface. The film growth was performed by means of molecular-beam epitaxy and characterized in-situ by reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS), and ex-situ by Raman spectroscopy and X-ray diffraction. It has been shown that the epitaxial growth was strongly affected by the growth conditions. At a low growth temperature range, multi-domains were observed. This has been explained according to the film growth kinetics, in which the nucleation and the growth are competing processes. At a high flux of Se, a 3D growth was observed. It is related to the decrease of the surface diffusion length of Ga adatoms. Finally, the mechanism for the epitaxial growth of GaSe on Si(111)7 × 7 is discussed in terms of the balance of surface free energy between interface, film and substrate.</div></front></TEI></record>Pour manipuler ce document sous Unix (Dilib)
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