Heteroepitaxy of GaSe layered semiconductor compound on Si (111) 7 × 7 substrate: a Van der Waals epitaxy?
Identifieur interne : 005301 ( Main/Merge ); précédent : 005300; suivant : 005302Heteroepitaxy of GaSe layered semiconductor compound on Si (111) 7 × 7 substrate: a Van der Waals epitaxy?
Auteurs : Le Thanh Vinh [France] ; M. Eddrief [France] ; C. Sébenne [France] ; A. Sacuto [France] ; M. Balkanski [France]Source :
- Journal of Crystal Growth [ 0022-0248 ] ; 1994.
Abstract
In a conventional heteroepitaxial system, the misfit between the lattice constants of two materials is a severe condition to overcome in order to get good heterostructures. Recently, Van der Waals epitaxy has been shown to relieve the lattice-mismatch stress by using materials which have strong bonding only in two dimensions. The Van der Waals epitaxy has so far been limited to quasi-one- or quasi-two-dimensional materials. We report, for the first time, the epitaxial growth of a GaSe layered semiconductor of Si(111)7 × 7, a substrate that is known to have active dangling bonds associated with the presence of adatoms along its surface. The film growth was performed by means of molecular-beam epitaxy and characterized in-situ by reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS), and ex-situ by Raman spectroscopy and X-ray diffraction. It has been shown that the epitaxial growth was strongly affected by the growth conditions. At a low growth temperature range, multi-domains were observed. This has been explained according to the film growth kinetics, in which the nucleation and the growth are competing processes. At a high flux of Se, a 3D growth was observed. It is related to the decrease of the surface diffusion length of Ga adatoms. Finally, the mechanism for the epitaxial growth of GaSe on Si(111)7 × 7 is discussed in terms of the balance of surface free energy between interface, film and substrate.
Url:
DOI: 10.1016/0022-0248(94)90719-6
Links toward previous steps (curation, corpus...)
- to stream Istex, to step Corpus: 001B21
- to stream Istex, to step Curation: 001B19
- to stream Istex, to step Checkpoint: 001996
Links to Exploration step
ISTEX:C9A1B21DCB519879095EDD54940E98BB7CBAC2AELe document en format XML
<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title>Heteroepitaxy of GaSe layered semiconductor compound on Si (111) 7 × 7 substrate: a Van der Waals epitaxy?</title>
<author><name sortKey="Vinh, Le Thanh" sort="Vinh, Le Thanh" uniqKey="Vinh L" first="Le Thanh" last="Vinh">Le Thanh Vinh</name>
</author>
<author><name sortKey="Eddrief, M" sort="Eddrief, M" uniqKey="Eddrief M" first="M." last="Eddrief">M. Eddrief</name>
</author>
<author><name sortKey="Sebenne, C" sort="Sebenne, C" uniqKey="Sebenne C" first="C." last="Sébenne">C. Sébenne</name>
</author>
<author><name sortKey="Sacuto, A" sort="Sacuto, A" uniqKey="Sacuto A" first="A." last="Sacuto">A. Sacuto</name>
</author>
<author><name sortKey="Balkanski, M" sort="Balkanski, M" uniqKey="Balkanski M" first="M." last="Balkanski">M. Balkanski</name>
</author>
</titleStmt>
<publicationStmt><idno type="wicri:source">ISTEX</idno>
<idno type="RBID">ISTEX:C9A1B21DCB519879095EDD54940E98BB7CBAC2AE</idno>
<date when="1994" year="1994">1994</date>
<idno type="doi">10.1016/0022-0248(94)90719-6</idno>
<idno type="url">https://api.istex.fr/document/C9A1B21DCB519879095EDD54940E98BB7CBAC2AE/fulltext/pdf</idno>
<idno type="wicri:Area/Istex/Corpus">001B21</idno>
<idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Corpus" wicri:corpus="ISTEX">001B21</idno>
<idno type="wicri:Area/Istex/Curation">001B19</idno>
<idno type="wicri:Area/Istex/Checkpoint">001996</idno>
<idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Checkpoint">001996</idno>
<idno type="wicri:doubleKey">0022-0248:1994:Vinh L:heteroepitaxy:of:gase</idno>
<idno type="wicri:Area/Main/Merge">005301</idno>
</publicationStmt>
<sourceDesc><biblStruct><analytic><title level="a">Heteroepitaxy of GaSe layered semiconductor compound on Si (111) 7 × 7 substrate: a Van der Waals epitaxy?</title>
<author><name sortKey="Vinh, Le Thanh" sort="Vinh, Le Thanh" uniqKey="Vinh L" first="Le Thanh" last="Vinh">Le Thanh Vinh</name>
<affiliation wicri:level="4"><country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire de Physique des Solides, associé au CNRS No. 154, Université Pierre et Marie Curie, Tour 13-E2, 4 Place Jussieu, F-75252 Paris Cedex 5</wicri:regionArea>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Paris</settlement>
</placeName>
<orgName type="university">Université Pierre-et-Marie-Curie</orgName>
</affiliation>
</author>
<author><name sortKey="Eddrief, M" sort="Eddrief, M" uniqKey="Eddrief M" first="M." last="Eddrief">M. Eddrief</name>
<affiliation wicri:level="4"><country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire de Physique des Solides, associé au CNRS No. 154, Université Pierre et Marie Curie, Tour 13-E2, 4 Place Jussieu, F-75252 Paris Cedex 5</wicri:regionArea>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Paris</settlement>
</placeName>
<orgName type="university">Université Pierre-et-Marie-Curie</orgName>
</affiliation>
</author>
<author><name sortKey="Sebenne, C" sort="Sebenne, C" uniqKey="Sebenne C" first="C." last="Sébenne">C. Sébenne</name>
<affiliation wicri:level="4"><country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire de Physique des Solides, associé au CNRS No. 154, Université Pierre et Marie Curie, Tour 13-E2, 4 Place Jussieu, F-75252 Paris Cedex 5</wicri:regionArea>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Paris</settlement>
</placeName>
<orgName type="university">Université Pierre-et-Marie-Curie</orgName>
</affiliation>
</author>
<author><name sortKey="Sacuto, A" sort="Sacuto, A" uniqKey="Sacuto A" first="A." last="Sacuto">A. Sacuto</name>
<affiliation wicri:level="4"><country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire de Physique des Solides, associé au CNRS No. 154, Université Pierre et Marie Curie, Tour 13-E2, 4 Place Jussieu, F-75252 Paris Cedex 5</wicri:regionArea>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Paris</settlement>
</placeName>
<orgName type="university">Université Pierre-et-Marie-Curie</orgName>
</affiliation>
</author>
<author><name sortKey="Balkanski, M" sort="Balkanski, M" uniqKey="Balkanski M" first="M." last="Balkanski">M. Balkanski</name>
<affiliation wicri:level="4"><country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire de Physique des Solides, associé au CNRS No. 154, Université Pierre et Marie Curie, Tour 13-E2, 4 Place Jussieu, F-75252 Paris Cedex 5</wicri:regionArea>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Paris</settlement>
</placeName>
<orgName type="university">Université Pierre-et-Marie-Curie</orgName>
</affiliation>
</author>
</analytic>
<monogr></monogr>
<series><title level="j">Journal of Crystal Growth</title>
<title level="j" type="abbrev">CRYS</title>
<idno type="ISSN">0022-0248</idno>
<imprint><publisher>ELSEVIER</publisher>
<date type="published" when="1994">1994</date>
<biblScope unit="volume">135</biblScope>
<biblScope unit="issue">1–2</biblScope>
<biblScope unit="page" from="1">1</biblScope>
<biblScope unit="page" to="10">10</biblScope>
</imprint>
<idno type="ISSN">0022-0248</idno>
</series>
<idno type="istex">C9A1B21DCB519879095EDD54940E98BB7CBAC2AE</idno>
<idno type="DOI">10.1016/0022-0248(94)90719-6</idno>
<idno type="PII">0022-0248(94)90719-6</idno>
</biblStruct>
</sourceDesc>
<seriesStmt><idno type="ISSN">0022-0248</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass></textClass>
<langUsage><language ident="en">en</language>
</langUsage>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In a conventional heteroepitaxial system, the misfit between the lattice constants of two materials is a severe condition to overcome in order to get good heterostructures. Recently, Van der Waals epitaxy has been shown to relieve the lattice-mismatch stress by using materials which have strong bonding only in two dimensions. The Van der Waals epitaxy has so far been limited to quasi-one- or quasi-two-dimensional materials. We report, for the first time, the epitaxial growth of a GaSe layered semiconductor of Si(111)7 × 7, a substrate that is known to have active dangling bonds associated with the presence of adatoms along its surface. The film growth was performed by means of molecular-beam epitaxy and characterized in-situ by reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS), and ex-situ by Raman spectroscopy and X-ray diffraction. It has been shown that the epitaxial growth was strongly affected by the growth conditions. At a low growth temperature range, multi-domains were observed. This has been explained according to the film growth kinetics, in which the nucleation and the growth are competing processes. At a high flux of Se, a 3D growth was observed. It is related to the decrease of the surface diffusion length of Ga adatoms. Finally, the mechanism for the epitaxial growth of GaSe on Si(111)7 × 7 is discussed in terms of the balance of surface free energy between interface, film and substrate.</div>
</front>
</TEI>
</record>
Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Wicri/Sante/explor/ParkinsonFranceV1/Data/Main/Merge
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 005301 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Merge/biblio.hfd -nk 005301 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien |wiki= Wicri/Sante |area= ParkinsonFranceV1 |flux= Main |étape= Merge |type= RBID |clé= ISTEX:C9A1B21DCB519879095EDD54940E98BB7CBAC2AE |texte= Heteroepitaxy of GaSe layered semiconductor compound on Si (111) 7 × 7 substrate: a Van der Waals epitaxy? }}
![]() | This area was generated with Dilib version V0.6.29. | ![]() |