Study of the photomagnetoelectric and photoconductivity effects with numerical methods, for any injection level, in gallium selenide
Identifieur interne : 002718 ( Main/Exploration ); précédent : 002717; suivant : 002719Study of the photomagnetoelectric and photoconductivity effects with numerical methods, for any injection level, in gallium selenide
Auteurs : V. Augelli [Italie] ; R. Piccolo [Italie] ; A. Rizzo [Italie] ; L. Vasanelli [Italie]Source :
- Physica B+C [ 0378-4363 ] ; 1981.
English descriptors
- Teeft :
- Active centres, Augelli, Behaviour, Centre, Conduction band, Electron concentration, Energy level, Experimental results, Gase, Gase samples, Injection level, Ipme, Magnetic field, Photoconductance, Photoconductivity, Photoconductivity currents, Phys, Recombination, Recombination kinetics, Recombination model, Theoretical curves, Thermal excitation, Valence band, Vasanelli.
Abstract
Abstract: The general theory of the photomagnetoelectric (PME) and photoconductivity (PC) effects has been associated with recombination kinetics based upon a two-centre model. Using a numerical approach, we describe, for any injection level, the theoretical behaviour of the short-circuit PME and photoconductivity currents as a function of the excess carrier concentration created by the light on the illuminated surface of the sample. Then, the behaviour of short-circuit PME current versus photoconductance is studied and compared with the experimental one obtained for GaSe samples.
Url:
DOI: 10.1016/0378-4363(81)90214-X
Affiliations:
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Le document en format XML
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<front><div type="abstract" xml:lang="en">Abstract: The general theory of the photomagnetoelectric (PME) and photoconductivity (PC) effects has been associated with recombination kinetics based upon a two-centre model. Using a numerical approach, we describe, for any injection level, the theoretical behaviour of the short-circuit PME and photoconductivity currents as a function of the excess carrier concentration created by the light on the illuminated surface of the sample. Then, the behaviour of short-circuit PME current versus photoconductance is studied and compared with the experimental one obtained for GaSe samples.</div>
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